1. Investigation of O3-Al2O3/H2O-Al2O3 dielectric bilayer deposited by atomic-layer deposition for GaN MOS capacitors.
- Author
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Shen, Zhen, He, Liang, Zhou, Guilin, Yao, Yao, Yang, Fan, Ni, Yiqiang, Zheng, Yue, Zhou, Deqiu, Ao, Jinping, Zhang, Baijun, and Liu, Yang
- Subjects
ELECTRIC capacity ,OXIDIZING agents ,CURRENT density (Electromagnetism) ,ELECTRIC currents ,STRAY currents - Abstract
In this work, H
2 O-Al2 O3 /O3 -Al2 O3 insulating bilayers were grown on GaN by atomic-layer deposition (ALD) technique using H2 O vapor and O3 as oxidants. The electrical and material properties show that the H2 O-Al2 O3 /O3 -Al2 O3 stack structure appeared to be an appropriate dielectric for GaN MOS devices that had low leakage current densities, high breakdown voltages, and good capacitance-voltage ( C-V) curves. The H2 O-Al2 O3 interlayer between the O3 -Al2 O3 and GaN efficiently prevented the GaN surface from oxidizing by ozone oxidant by its strong oxidizing power. By taking photo-assisted C-V measurements, it was found that the deep interface state densities at the Al2 O3 /GaN interface reduced, while increasing the thicknesses of the H2 O-Al2 O3 interlayer restricted the 'Vth shift' phenomenon and improved the stability and reliability of the GaN MOS devices. [ABSTRACT FROM AUTHOR]- Published
- 2016
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