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Electrochemical deposition into a prepared SiO2/Si-p ion track template was used to make orthorhombic SnO2 vertical nanowires (NWs) for this study. As a result, a SnO2-NWs/SiO2/Si nanoheterostructure with an orthorhombic crystal structure of SnO2 nanowires was obtained. Photoluminescence excited by light with a wavelength of 240 nm has a low intensity, arising mainly due to defects such as oxygen vacancies and interstitial tin or tin with damaged bonds. The current–voltage characteristic measurement showed that the SnO2-NWs/SiO2/Si nanoheterostructure made this way has many p-n junctions. [ABSTRACT FROM AUTHOR]

The synthesis of CdTe nanocrystals (NCs) is performed by electrochemical deposition into prepared ion tracks in a a‐SiO2/Si‐n template. As a result, CdTe NCs are obtained in a wurtzite (WZ) crystal phase. The measurement of the current–voltage characteristics shows that the CdTe (WZ NC)/SiO2/Si system obtained in this way has n‐type conductivity. Computer simulations using the CRYSTAL computer code show good agreement between experimental and calculated lattice parameters. The theoretical calculations also show that the crystal has a direct bandgap at the Γ point of the Brillouin zone. [ABSTRACT FROM AUTHOR]

ZnO nanoclusters obtained by electrochemical deposition (ECD) of zinc in track template a -SiO 2 /Si - n have been studied. The structure SiO 2 /Si was irradiated at DC-60 cyclotron with 200 MeV Xe ions (Φ = 108 ions/cm2) with subsequent chemical etching in the diluted hydrofluoric acid (HF). Electrochemical deposition (ECD) of Zn in track template was carried out in the potentiostatic mode. The surface of samples was examined using a SEM JSM 7500F microscope. X-ray diffraction analysis was carried out using a D8 ADVANCE ECO X-ray diffractometer. According to XRD, the electrodeposition of zinc into the a -SiO 2 /Si - n track template resulted in a formation of zincblende (ZB) ZnO nanocrystals. Current-voltage characteristics and photoluminescence of SiO 2 /Si track template with ZnO ZB nanocrystals were investigated. • Zn is electrochemically deposited in the track templates a-SiO 2 /Si - n. • ZnO nanocrystals with zincblende structure are obtained. • Current-voltage characteristic of the obtained structure have of diode nature. • The luminescence spectrum of ZnO ZB nanocrystals coincides with the luminescence spectrum of ZnO nanocrystals with WZ. [ABSTRACT FROM AUTHOR]