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New drug discovery in the pediatrics has dramatically improved survival, but with long- term adverse events. This motivates the examination of adverse outcomes such as long-term toxicity in a phase IV trial. An ideal approach to monitor long-term toxicity is to systematically follow the survivors, which is generally not feasible. Instead, cross-sectional surveys are conducted in Hudson et al. (2007), with one of the objectives to estimate the cumulative incidence rates along with specific interest in fixed-term (5 or 10 year) rates. We present inference procedures based on current status data to our motivating example with very interesting findings. [ABSTRACT FROM AUTHOR]

Transistor mismatch data and analysis from poly/SiON and high-k/metal-gate (HKMG) bulk CMOS technologies are presented. It is found that the traditional mismatch figure of merit from the Pelgrom plot (AVT) continuously scales down as technology advances. Furthermore, the AVT values for both nFET and pFET in the HKMG technology are significantly reduced from poly/SiON technologies. By normalizing the mismatch data against electrical oxide thickness (TINV), threshold voltage (VTH), and effective work function, a direct comparison of the mismatch data from various technologies is made. The differences in nFET and pFET mismatch behaviors in both poly/SiON and HKMG technologies are discussed in detail. Correlation between transistor VTH mismatch and flicker noise variation is observed in both poly/SiON and HKMG technologies. Finally, it is quantitatively demonstrated that effective work function variation does not generate significant VTH variability in the present HKMG technology. [ABSTRACT FROM AUTHOR]