Search

Defect passivation is nowadays considered a must‐have route for high‐efficiency perovskite solar cells. However, a general rule that correlates the choice of passivating agents with performance enhancements is still missing. Herein, two different thiophene salts that are used as passivating agents are compared, namely thiophene methylammonium chloride and thiophene ethylammonium chloride (TEACl), which are used for the passivation of bulk and surface defects in triple‐cation‐based metal halide perovskites. First, it is observed that the surface passivation method leads to better device performances reaching a power conversion efficiency of 23.56%, with reduced voltage losses and increased fill factor when compared with the reference. Second, it is demonstrated that the chemical structure of the cation dictates its capability either in passivating bulk defects effectively or to form a superficial two‐dimensional/three‐dimensional heterostructure, which happens only for the TEACl case. The chemical composition and the cation dimension are responsible for device performance enhancement as observed by a joint spectroscopic and density functional theory simulations study, providing rational guidelines for further smart device design. [ABSTRACT FROM AUTHOR]

Advancing non‐fullerene acceptor (NFA) organic photovoltaics requires the mitigation of the efficiency‐limiting processes. Acceptor end‐group and side‐chain engineering are two handles to tune properties, and a better understanding of their specific impact on the photophysics could facilitate a more guided acceptor design. Here, the device performance, energetic landscape, and photophysics of rhodanine and dicyanovinyl end‐capped IDT‐based NFAs, namely, O‐IDTBR and O‐IDTBCN, in PCE10‐based solar cells are compared by transient optical and electro‐optical spectroscopy techniques and density functional theory calculations. It is revealed how the acceptors' quadrupole moments affect the interfacial energetic landscape, in turn causing differences in exciton quenching, charge dissociation efficiencies, and geminate versus non‐geminate recombination losses. More precisely, it is found that the open circuit voltage (VOC) is controlled by the acceptors' electron affinity (EA), while geminate and non‐geminate recombination, and the field dependence of charge generation, rely on the acceptors' quadrupole moments. The kinetic parameters and yields of all processes are determined, and it is demonstrated that they can reproduce the performance differences of the devices' current–voltage characteristics in carrier drift‐diffusion simulations. The results provide insight into the impact of the energetic landscape, specifically the role of the quadrupole moment of the acceptor, beyond trivial considerations of the donor–acceptor energy offsets. [ABSTRACT FROM AUTHOR]

Passivating metal/silicon contacts combine low carrier recombination with low contact resistivities, enabled by a low gap state density at their interface. Such contacts find applications in high-efficiency solar cells. We perform first-principles calculations based on density functional theory to investigate the surface defect and metal-induced gap state density of silicon in close contact with metals (Al and Ag). We confirm that surface hydrogenation fully removes surface-defect gap states of (111)-oriented silicon surfaces. However, the metal-induced gap state density increases significantly when metals are closer than 0.5 nm to such surfaces. These results highlight the importance of the tunneling-film thickness in achieving effective passivating-contact formation. [ABSTRACT FROM AUTHOR]