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MoO3 and MoO2 systems have attracted particular attention for many widespread applications thanks to their electronic and optical peculiarities; from the crystallographic point of view, MoO3 adopts a thermodynamically stable orthorhombic phase (α-MoO3) belonging to the space group Pbmn, while MoO2 assumes a monoclinic arrangement characterized by space group P21/c. In the present paper, we investigated the electronic and optical properties of both MoO3 and MoO2 by using Density Functional Theory calculations, in particular, the Meta Generalized Gradient Approximation (MGGA) SCAN functional together with the PseudoDojo pseudopotential, which were used for the first time to obtain a deeper insight into the nature of different Mo–O bonds in these materials. The calculated density of states, the band gap, and the band structure were confirmed and validated by comparison with already available experimental results, while the optical properties were validated by recording optical spectra. Furthermore, the calculated band-gap energy value for the orthorhombic MoO3 showed the best match to the experimental value reported in the literature. All these findings suggest that the newly proposed theoretical techniques reproduce the experimental evidence of both MoO2 and MoO3 systems with high accuracy. [ABSTRACT FROM AUTHOR]

HfO2 can assume different crystalline structures, such as monoclinic, orthorhombic, and cubic polymorphs, each one characterized by unical properties. The peculiarities of this material are also strongly related to the presence of doping elements in the unit cell. Thus, the present paper has the main purpose of studying and comparing twelve different systems characterized by diverse polymorphs and doping percentages. In particular, three different crystalline structures were considered: the monoclinic P21/c, the orthorhombic Pca21, and the cubic Fm 3 ¯ m phases of HfO2. Each one has been studied by using Y as a doping agent with three different contents: 0% Y:HfO2, 8% Y:HfO2, 12% Y:HfO2, and 16% Y:HfO2. For all the systems, density functional theory (DFT) methods based on PBE/GGA, and on the HSE hybrid functionals were used to optimize the geometry as well as to study their optical properties. Depending on the polymorphs, Y affects the formation energy in different ways and causes changes in the optical properties. When the percentage of Y did not exceed 12%, a stabilization of the cubic phase fraction and an increase of the dielectric constant was observed. Additionally, the calculated optical bandgap energies and the refractive index are examined to provide an overview of the systems and are compared with experimental data. The bandgaps obtained are in perfect agreement with the experimental values and show a slight increase as the doping percentage grows, while only minor differences are found between the three polymorphs in terms of both refractive index and optical band gap. The adopted first principles study generates a reasonable prediction of the physical-chemical properties of all the systems, thus identifying the effects of doping phenomena. [ABSTRACT FROM AUTHOR]

HfO2 shows different polymorphs, including monoclinic and orthorhombic ones, that exhibit singular properties. Moreover, the character of HfO2 is also influenced by the Zr atoms as a doping agent. Here, an extensive study of the monoclinic P21/c and the orthorhombic Pca21 polymorphs of HfO2, Hf0.75Zr0.25O2, and Hf0.5Zr0.5O2 is reported. For all six systems, density functional theory (DFT) methods based on generalized gradient approximations (GGAs) were first used; then the GGA + U method was settled and calibrated to describe the electrical and optical properties of polymorphs and the responses to the oxygen vacancies. Zr had different effects in relation to the polymorph; moreover, the amount of Zr led to important differences in the optical properties of the Pca21 polymorph. Finally, oxygen vacancies were investigated, showing an important modulation of the properties of HfxZryO2 nanostructures. The combined GGA and GGA + U methods adopted in this work generate a reasonable prediction of the physicochemical properties of o- and m-HfxZryO2, identifying the effects of doping phenomena. [ABSTRACT FROM AUTHOR]

Background: Hafnium Dioxide (HfO2) represents a hopeful material for gate dielectric thin films in the field of semiconductor integrated circuits. For HfO2, several crystal structures are possible, with different properties which can be difficult to describe in detail from an experimental point of view. In this study, a detailed computational approach has been shown to present a complete analysis of four HfO2 polymorphs, outlining the intrinsic properties of each phase on the basis of atomistic displacements. Methods: Density functional theory (DFT) based methods have been used to accurately describe the chemical physical properties of the polymorphs. Corrective Hubbard (U) semi-empirical terms have been added to exchange correlation energy in order to better reproduce the excited-state properties of HfO2 polymorphs. Results: the monoclinic phase resulted in the lowest cohesive energy, while the orthorhombic showed peculiar properties due to its intrinsic ferroelectric behavior. DFT + U methods showed the different responses of the four polymorphs to an applied field, and the orthorhombic phase was the least likely to undergo point defects as oxygen vacancies. Conclusions: The obtained results give a deeper insight into the differences in excited states phenomena in relation to each specific HfO2 polymorph. [ABSTRACT FROM AUTHOR]

The choice of the pseudopotentials (PPs) is a crucial step towards an accurate atomistic calculation of physical properties of 2D materials. In this study, based on Density-Functional Perturbation Theory (DFPT), we investigated the dependency of the phonon properties such as phonon frequencies, dielectric constant, Born effective charge, and vibrational modes of SnSe and SnSe 2 monolayers to the different types of PPs. On the basis of Generalized Gradient Approximation (GGA) using PBE functional, we computed eight phonon calculations for both lattices in combinations with four different PPs including Normconversing (NC) FHI/HGH, Ultrasoft (USPP), and Standard Solid-State (SSSP), while other parameters like cut-off energy, k -points mesh, and convergence threshold were kept fixed. However, the phonon properties of acoustic and optical phonons were better predicted by USPP and SSSP for phonon dispersion of SnSe and SnSe 2 , respectively. Regarding the dielectric constant and Bohr effective charge calculations, our results showed that SnSe and SnSe 2 structures possess the dielectric tensor of 8.9 and 6.6 along the in-plane direction by using USPP calculations. Our outcomes also revealed less sensitivity of SnSe 2 polarization to the type of PPs by applying the electric field. This study recommends USPP and SSSP to further phonon analysis of other semiconductors. [Display omitted] • Computational study of pseudopotential choice for DFT calculations of SnSe and SnSe 2 has been investigated. • Eight GGA/PBE schemes have been examined by employing NC-FHI. NC-HGH, USPP, and SSSP methodologies. • USPP and SSSP confirmed stability of SnSe and SnSe2, NC-FHI and NC-HGH showed imaginary frequencies near the gamma points. • In the presence of an electric field, SnSe and SnSe 2 had higher dielectric tensor of 8.9 and 6.6, respectively, using USPP. • The SnSe 2 lattice polarization was less sensitive to the choice of pseudopotential. [ABSTRACT FROM AUTHOR]