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The antimony-doped tin oxide thin films for gas sensors were prepared via a sol–gel route on alumina substrates. The influence of the antimony addition amount on the electrical resistance of thin films was concluded. The relationship between them was plotted in the coordinates of logarithmic resistance against doping amount. On the basis of the Schottky barrier model, a novel method was used to evaluate the width of depletion layer of semiconductive gas sensors by using the first-order derivative of logarithmic resistance with respect to doping amount. The values of the depletion layer width were calculated for the antimony-doped thin films. The H 2 S gas was used to examine the sensor properties, which positively correlated to the depletion layer width. The oxygen species of O 2− and O − were determined to be the adsorbates on SnO 2 grains with the same proportion at the operating temperature of 300 °C. The location of the Fermi level was found to be a crucial factor that dominated the calculation results. [ABSTRACT FROM AUTHOR]