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Start Over Author "Sato-Iwanaga, Junko" Topic device simulation

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1. Optimized design of Si-cap layer in strained-SiGe channel p-MOSFETs based on computational and experimental approaches.

Author

Sato-Iwanaga, Junko, Inoue, Akira, Sorada, Haruyuki, Takagi, Takeshi, Rothschild, Aude, Loo, Roger, Biesemans, Serge, Ito, Choshu, Liu, Yang, Dutton, Robert W., and Tsuchiya, Hideaki

Subjects
*SILICON compounds, *METAL oxide semiconductor field-effect transistors, *COMPUTER simulation, *DISTRIBUTION (Probability theory), *MATHEMATICAL optimization, *SURFACE scattering
Abstract

Highlights: [•] Strainde-SiGe channel p-MOSFETs with a Si-cap layer are studied. [•] The roles of Si-cap layer are clarified by using simulation and experiment. [•] 2D hole distributions is described by considering quantum confinement effect. [•] Mobility degradation in a SiGe channel by surface scattering is considered. [•] Insertion of a Si-cap layer is effective to reduce an OFF-state leakage current. [ABSTRACT FROM AUTHOR]

Published
2014
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