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We provide the first systematic characterization of the structural and photoluminescence properties of optically active defect centers fabricated upon implantation of 30-100 keV Mg+ ions in artificial diamond. The structural configurations of Mg-related defects were studied by the emission channeling technique for 27Mg implantations performed both at room-temperature and 800 {\deg}C, which allowed the identification of a major fraction of Mg atoms (~30-42%) in sites which are compatible with the split-vacancy structure of the MgV complex. A smaller fraction of Mg atoms (~13-17%) was found on substitutional sites. The photoluminescence emission was investigated both at the ensemble and individual defect level in a temperature range comprised between 5 K and 300 K, offering a detailed picture of the MgV-related emission properties and revealing the occurrence of previously unreported spectral features. The optical excitability of the MgV center was also studied as a function of the optical excitation wavelength enabling to identify the optimal conditions for photostable and intense emission. The results are discussed in the context of the preliminary experimental data and the theoretical models available in the literature, with appealing perspectives for the utilization of the tunable properties of the MgV center for quantum information processing applications., Comment: 7 figures

We report a systematic photoluminescence (PL) investigation of the spectral emission properties of individual optical defects fabricated in diamond upon ion implantation and annealing. Three spectral lines at 620 nm, 631 nm, and 647 nm are identified and attributed to the SnV center due to their occurrence in the PL spectra of the very same single-photon emitting defects. We show that the relative occurrence of the three spectral features can be modified by oxidizing the sample surface following thermal annealing. We finally report the relevant emission properties of each class of individual emitters, including the excited state emission lifetime and the emission intensity saturation parameters., 12 pages, 6 figures, 1 table

Nitrogen-vacancy (NV) centers in diamond allow measurement of magnetic fields at nanoscale. The working principle is based on the measurement of a NV center resonance frequency shift, detected by monitoring the center's photoluminescence. Here we present a technique based on lock-in detection and simultaneous excitation of the three peaks corresponding to hyperfine interaction between the NV center and the 14N nucleus.

We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600 - 750 nm spectral range. Characterization at liquid He temperature reveals the presence of a structured set of lines in the 600 - 670 nm spectral range. We discuss the dependence of the emission properties of F-related optical centers on different experimental parameters such as the operating temperature and the excitation wavelength. The correlation of the emission intensity with F implantation fluence, and the exclusive observation of the afore-mentioned spectral features in F-implanted and annealed samples provides a strong indication that the observed emission features are related to a stable F-containing defective complex in the diamond lattice., Comment: 10 pages, 5 figures

Diamond is a promising material for the development of emerging applications in quantum optics, quantum information and quantum sensing. The fabrication and characterization of novel luminescent defects with suitable opto-physical properties is therefore of primary importance for further advances in these research fields. In this work we report on the investigation in the formation of photoluminescent (PL) defects upon MeV He implantation in diamond. Such color centers, previously reported only in electroluminescence and cathodoluminescence regime, exhibited two sharp emission lines at 536.5 nm and 560.5 nm, without significant phonon sidebands. A strong correlation between the PL intensities of the above-mentioned emission lines and the He implantation fluence was found in the 10^15-10^17 cm^{-2} fluence range. The PL emission features were not detected in control samples, i.e. samples that were either unirradiated or irradiated with different ion species (H, C). Moreover, the PL emission lines disappeared in samples that were He-implanted above the graphitization threshold. Therefore, the PL features are attributed to optically active defects in the diamond matrix associated with He impurities. The intensity of the 536.5 nm and 560.5 nm emission lines was investigated as a function of the annealing temperature of the diamond substrate. The emission was observed upon annealing at temperatures higher than 500{\deg}C, at the expenses of the concurrently decreasing neutral-vacancy-related GR1 emission intensity. Therefore, our findings indicate that the luminescence originates from the formation of a stable lattice defect. Finally, the emission was investigated under different laser excitations wavelengths (i.e. 532 nm and 405 nm) with the purpose of gaining a preliminary insight about the position of the related levels in the energy gap of diamond.

Color centres in diamond represent a very interesting system for realizing single photon emitters, even at room temperature, in particular are attracting an ever-growing interest in quantum optics, quantum information and quantum sensing, due to their appealing photo-physical properties combined with ease of access and manipulation in a solid state system characterized by high transparency and structural stability. Literally hundreds of optically active color centers can be created and controlled in the diamond matrix, to be employed either as bright and stable single-photon sources or individual spin systems with optical readout, with record performances even at room temperature. In concurrence with the remarkable results obtained at the state of the art on the exploitation of the unique properties of the negatively-charged nitrogen-vacancy complex (NV), new and appealing color centers are continuously being discovered and characterized. In the present contribution, the most recent results obtained by a collaboration among the Italian National Institutes of Metrologic Research (INRiM), the University of Torino and the Italian National Institutes of Nuclear Physics (INFN) will be overviewed and critically assessed in their future perspectives.

This work reports on the pilot study, performed by INRIM, NPL and PTB, on the measurement of the g^(2)(0) parameter in the visible spectral range of a test single-photon source based on a colour centre in diamond. The development of single-photon sources is of great interest to the metrology community as well as the burgeoning quantum technologies industry. Measurement of the g^(2)(0) parameter plays a vital role in characterising and understanding single-photon emission. This comparison has been conducted by each partner individually using its own equipment at INRIM laboratories, which were responsible for the operation of the source

Electrically-active defects have a significant impact on the performance of electronic devices based on wide band-gap materials such as diamond. This issue is ubiquitous in diamond science and technology, since the presence of charge traps in the active regions of different classes of diamond-based devices (detectors, power diodes, transistors) can significantly affect their performances, due to the formation of space charge, memory effects and the degradation of the electronic response associated with radiation damage. Among the most common defects in diamond, the nitrogen-vacancy (NV) center possesses unique spin properties which enable high-sensitivity field sensing at the nanoscale. Here we demonstrate that NV ensembles can be successfully exploited to perform a direct local mapping of the internal electric field distribution of a graphite-diamond-graphite junction exhibiting electrical properties dominated by trap- and space-charge-related conduction mechanisms. By performing optically-detected magnetic resonance measurements, we performed both punctual readout and spatial mapping of the electric field in the active region at different bias voltages. In this novel "self-diagnostic" approach, defect complexes represent not only the source of detrimental space charge effects, but also a unique tool to directly investigate them, by providing experimental evidences on the conduction mechanisms that in previous studies could only be indirectly inferred on the basis of conventional electrical and optical characterization.

Deterministic single-photon sources are a fundamental tool for several emerging applications in quantum sensing and quantum metrology. In these fields, the exploitation of individual quantum systems could significantly improve the current measuring capabilities and define a new generation of standard measure units. In addition, the availability of nanoscale-sized single-photon emitters is also of considerable interest, as it enables a further integration with external structures or biological samples. In this work, we investigate the role of MeV proton irradiation in the production of single-photon emitters based on the nitrogen-vacancy complex (NV center) in nanodiamonds (NDs). Powders of nitrogen-containing type Ib diamond nanocrystals with a median size distribution of 80 nm were irradiated with 2 MeV protons at 5 × 1013 cm−2 fluence with the purpose of creating vacancies and thus promote the formation of NV centers upon a subsequent thermal annealing. Following a suitable chemical processing, the ND powders were characterized in their opto-physical properties by means of a single-photon-sensitive confocal photoluminescence microscopy setup equipped with a “Hanbury Brown & Twiss” interferometer, enabling the measurement of the second-order autocorrelation function characterizing the PL emission. A comparison with two reference batches of unirradiated NDs powder, which only underwent the chemical, and the chemical and thermal treatment, respectively, enabled to assess the role of ion implantation in the production of single-photon sources.

We report on the creation and characterization of Pb-related color centers in diamond upon ion implantation and subsequent thermal annealing. Their optical emission in the photoluminescence (PL) regime consists of an articulated spectrum with intense emission peaks at 552.1 and 556.8 nm, accompanied by a set of additional lines in the 535–700 nm range. The attribution of the PL emission to stable Pb-based defects is corroborated by the correlation of its intensity with the implantation fluence of Pb ions. PL measurements performed as a function of sample temperature (in the 143–300 K range) and under different excitation wavelengths (i.e., 532, 514, 405 nm) suggest that the complex spectral features observed in Pb- implanted diamond might be related to a variety of different defects and/or charge states. The emission of the 552.1 and 556.8 nm lines is reported at the single-photon emitter level, demonstrating that they originate from the same individual defect. This work follows from previous reports on optically active centers in diamond based on group-IV impurities, such as Si, Ge, and Sn. In perspective, a comprehensive study of this set of defect complexes could bring significant insight on the common features involved in their formation and opto-physical properties, thus offering a basis for the development of a new generation of quantum-optical devices.

In this work we experimentally demonstrate a recently proposed criterion addressed to detect nonclassical behavior in the fluorescence emission of ensembles of single-photon emitters. In particular, we apply the method to study clusters of nitrogen-vacancy centers in diamond characterized with single-photon-sensitive confocal microscopy. Theoretical considerations on the behavior of the parameter at any arbitrary order in the presence of Poissonian noise are presented and, finally, the opportunity of detecting manifold coincidences is discussed.

Properties of quantum light represent a tool for overcoming limits of classical optics. Several experiments have demonstrated this advantage ranging from quantum enhanced imaging to quantum illumination. In this work, experimental demonstration of quantum-enhanced resolution in confocal fluorescence microscopy will be presented. This is achieved by exploiting the non-classical photon statistics of fluorescence emission of single nitrogen-vacancy (NV) color centers in diamond. By developing a general model of super-resolution based on the direct sampling of the kth-order autocorrelation function of the photoluminescence signal, we show the possibility to resolve, in principle, arbitrarily close emitting centers. Finally, possible applications of NV-based fluorescent nanodiamonds in biosensing and future developments will be presented.

The fabrication of luminescent defects in single-crystal diamond upon Sn implantation and annealing is reported. The relevant spectral features of the optical centers (emission peaks at 593.5 nm, 620.3 nm, 630.7 nm and 646.7 nm) are attributed to Sn-related defects through the correlation of their photoluminescence (PL) intensity with the implantation fluence. Single Sn-related defects were identified and characterized through the acquisition of their second-order auto-correlation emission functions, by means of Hanbury-Brown-Twiss interferometry. The investigation of their single-photon emission regime as a function of excitation laser power revealed that Sn-related defects are based on three-level systems with a 6 ns radiative decay lifetime. In a fraction of the studied centers, the observation of a blinking PL emission is indicative of the existence of a dark state. Furthermore, absorption dependence from the polarization of the excitation radiation with about 45 percent contrast was measured. This work shed light on the existence of a new optical center associated with a group-IV impurity in diamond, with similar photo-physical properties to the already well-known Si-V and Ge-V emitters, thus providing results of interest from both the fundamental and applicative points of view., Comment: 10 pages, 4 figures

Focused MeV ion beams with micrometric resolution are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk, as already demonstrated for different device applications. In this work we apply this fabrication method to the electrical excitation of color centers in diamond, demonstrating the potential of electrical stimulation in diamond-based single-photon sources. Differently from optically-stimulated light emission from color centers in diamond, electroluminescence (EL) requires a high current flowing in the diamond subgap states between the electrodes. With this purpose, buried graphitic electrode pairs, 10 μm spaced, were fabricated in the bulk of a single-crystal diamond sample using a 6 MeV C microbeam. The electrical characterization of the structure showed a significant current injection above an effective voltage threshold of 150 V, which enabled the stimulation of a stable EL emission. The EL imaging allowed to identify the electroluminescent regions and the residual vacancy distribution associated with the fabrication technique. Measurements evidenced isolated electroluminescent spots where non-classical light emission in the 560–700 nm spectral range was observed. The spectral and auto-correlation features of the EL emission were investigated to qualify the non-classical properties of the color centers.

Focused MeV ion microbeams are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk, as demonstrated in previous works with the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate the suitability of the fabrication method for the electrical excitation of colour centres in diamond. Differently from photoluminescence, electroluminescence requires an electrical current flowing through the diamond sub-gap states for the excitation of the colour centres. With this purpose, buried graphitic electrodes with a spacing of 10 micrometers were fabricated in the bulk of a detector-grade CVD single-crystal diamond sample using a scanning 1.8 MeV He micro-beam. The current flowing in the gap region between the electrodes upon the application of a 250 V bias voltage was exploited as the excitation pump for the electroluminescence of different types of colour centres localized in the above-mentioned gap. The bright light emission was spatially mapped using a confocal optical microscopy setup. The spectral analysis of electroluminescence revealed the emission from neutrally-charged nitrogen-vacancy centres ($NV^0$, $\lambda_{ZPL}$ = 575 nm), as well as from cluster crystal dislocations (A-band, {\lambda} = 400-500 nm). Moreover, an electroluminescence signal with appealing spectral features (sharp emission at room temperature, low phonon sidebands) from He-related defects was detected ($\lambda_{ZPL}$ = 536.3 nm, $\lambda_{ZPL}$ = 560.5 nm); a low and broad peak around {\lambda} = 740 nm was also observed and tentatively ascribed to Si-V or GR1 centres. These results pose interesting future perspectives for the fabrication of electrically-stimulated single-photon emitters in diamond for applications in quantum optics and quantum cryptography.

We experimentally demonstrate quantum enhanced resolution in confocal fluorescence microscopy exploiting the non-classical photon statistics of single nitrogen-vacancy colour centres in diamond. By developing a general model of super-resolution based on the direct sampling of the kth-order autocorrelation function of the photoluminescence signal, we show the possibility, in some cases, to resolve in principle arbitrarily close emitting centers.

Single-photon sources (SPS) play a key-role in many applications, spanning from quantum metrology, to quantum information and to the foundations of quantum mechanics. Even if an ideal SPS (i. e. emitting indistinguishable, ”on-demand” single photons, at an arbitrarily fast repetition rate) is far to be realized due to real-world deviations from the ideality, much effort is currently devoted to improving the performance of real sources. With regards to the emission probability, it appears natural to employ sources that are in principle deterministic in the single- photon emission (single quantum emitters such as single atoms, ions, molecules, quantum dots, or color centers in diamond) as opposed to probabilistic ones (usually heralded SPS based on parametric down-conversion). We present an overview of our latest results concerning a work-in-progress NIR pulsed single photon source based on single quantum emitters (color centers in diamond) exploiting recently reported centers. They are particularly interesting because of the narrow emission line (tipically less than 5 nm), the shorter excited state lifetime with respect to NV centres (1 - 2 ns compared to 12 ns, allowing a ten-fold photon emission rate upon saturation) and the polarized emission.

Single-photon sources are a fundamental element for developing quantum technologies, and sources based on colour centres in diamonds are among the most promising candidates. The well-known NV centres are characterized by several limitations, thus few other defects have recently been considered. In the present work, we characterize in detail native efficient single colour centres emitting in the near infra-red in both standard IIa single-crystal and electronic-grade polycrystalline commercial CVD diamond samples. In the former case, a high-temperature annealing process in vacuum is necessary to induce the formation/activation of luminescent centres with good emission properties, while in the latter case the annealing process has marginal beneficial effects on the number and performances of native centres in commercially available samples. Although displaying significant variability in several photo physical properties (emission wavelength, emission rate instabilities, saturation behaviours), these centres generally display appealing photophysical properties for applications as single photon sources: short lifetimes, high emission rates and strongly polarized light. The native centres are tentatively attributed to impurities incorporated in the diamond crystal during the CVD growth of high-quality type IIa samples, and offer promising perspectives in diamond-based photonics., Comment: 27 pages, 10 figures. Submitted to "New Journal of Phsyics", NJP-100003.R2

In this proceedings we will present a research project financed by Piedmont regional government (Italy) and finalized to the realization and commercialization of functional devices for cellular bio-sensing based on diamond. Partners of the project are: Crisel Instruments, Torino University, Torino Polytechnic, INRIM, Politronica, Bionica Tech, Ulm University Here the main features of the final devices will be briefly summarized. We envisage an active diamond-based cellular substrate that can simultaneously stimulate and detect a variety of signals (chemical, optical, electrical) to and from neuroendocrine cells, in a fully biocompatible environment for the cellular system under test. Such a device can be realized by fully exploiting the peculiar properties of diamond: optical transparency, biocompatibility, chemical inertness, accessibility to a conductive graphite-like phase; properties that will be further explored and tested during the project.

Single-photon sources represent a key enabling technology in quantum optics, and single colour centres in diamond are a promising platform to serve this purpose, due to their high quantum efficiency and photostability at room temperature. The widely studied nitrogen vacancy centres are characterized by several limitations, thus other defects have recently been considered, with a specific focus of centres emitting in the Near Infra-Red. In the present work, we report on the coupling of native near-infrared-emitting centres in high-quality single crystal diamond with Solid Immersion Lens structures fabricated by Focused Ion Beam lithography. The reported improvements in terms of light collection efficiency make the proposed system an ideal platform for the development of single-photon emitters with appealing photophysical and spectral properties., Comment: 17 pages, 5 figures

We experimentally demonstrate quantum enhanced resolution in confocal fluorescence microscopy exploiting the non-classical photon statistics of single nitrogen-vacancy colour centres in diamond.