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1. Effect of 3C-SiC(100) initial surface stoichiometry on bias enhanced diamond nucleation.

Author

Arnault, J. C., Intiso, L., Saada, S., Delclos, S., Bergonzo, P., and Polini, R.

Subjects
NUCLEATION, MICROWAVE plasmas, CHEMICAL vapor deposition, DIAMONDS, SILICON, ELECTRON spectroscopy
Abstract

Two 3C-SiC(100) reconstructed surfaces have been exposed to bias enhanced nucleation (BEN) treatments performed in a microwave plasma chemical vapor deposition reactor. For both BEN steps, a significant enhancement of the diamond nucleation density has been observed on the initial C-terminated surface compared to the Si-rich surface. Samples have been characterized by in situ surface analysis, namely, x-ray photoelectron spectroscopy and x-ray Auger electron spectroscopy, and by field emission gun scanning electron microscopy. [ABSTRACT FROM AUTHOR]

Published
2007
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