1. Growth and characterization of α-Ga2O3 on sapphire and nanocrystalline β-Ga2O3 on diamond substrates by halide vapor phase epitaxy.
- Author
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Modak, Sushrut, Lundh, James Spencer, Al-Mamun, Nahid Sultan, Chernyak, Leonid, Haque, Aman, Tu, Thieu Quang, Kuramata, Akito, Tadjer, Marko J., and Pearton, Stephen J.
- Subjects
SAPPHIRES ,DIAMOND crystals ,EPITAXY ,DIAMOND surfaces ,GASES ,TRANSMISSION electron microscopy ,DIAMONDS - Abstract
Halide vapor phase epitaxial (HVPE) Ga
2 O3 films were grown on c-plane sapphire and diamond substrates at temperatures up to 550 °C without the use of a barrier dielectric layer to protect the diamond surface. Corundum phase α-Ga2 O3 was grown on the sapphire substrates, whereas the growth on diamond resulted in regions of nanocrystalline β-Ga2 O3 (nc-β-Ga2 O3 ) when oxygen was present in the HVPE reactor only during film growth. X-ray diffraction confirmed the growth of α-Ga2 O3 on sapphire but failed to detect any β-Ga2 O3 reflections from the films grown on diamond. These films were further characterized via Raman spectroscopy, which revealed the β-Ga2 O3 phase of these films. Transmission electron microscopy demonstrated the nanocrystalline character of these films. From cathodoluminescence spectra, three emission bands, UVL′, UVL, and BL, were observed for both the α-Ga2 O3 /sapphire and nc-Ga2 O3 /diamond, and these bands were centered at approximately 3.7, 3.2, and 2.7 eV. [ABSTRACT FROM AUTHOR]- Published
- 2022
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