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The spectral linewidth of semiconductor lasers is a crucial performance parameter in a growing number of applications. A common method to improve the coherence of the laser relies on increasing the optical cavity length by an extended section without gain material. Here, this extended cavity diode laser (ECDL) concept is realized in a monolithic device at 1064 nm wavelength. This is accomplished by applying a two‐step epitaxy in the aluminum gallium arsenide material system to selectively remove the active layers in a specific section of the chip. The extended passive section decreases the 3 dB linewidth to 32 kHz at 1 ms integration time. A direct comparison between the performance of the monolithic ECDL and a distributed Bragg reflector laser from the same wafer demonstrates the feasibility of the approach. The results in terms of frequency noise, side mode suppression ratio, injection current threshold, and slope efficiency show that the passive section reduces the laser linewidth while the additional interfaces within the laser cavity created by the manufacturing process do not deteriorate the electro‐optical properties or frequency stability. This opens the possibility for the realization of gallium arsenide based photonic integrated circuits by monolithically combining active and low‐loss passive waveguides. [ABSTRACT FROM AUTHOR]

Distributed Bragg Reflector semiconductor lasers are ideally suited for quantum technology applications due to their high efficiency, small footprint, and tunability in combination with the frequency stability provided by an integrated frequency selective element. Here we present the design, fabrication, and electro-optical characterization of DBR lasers optimized for strontium-based quantum technology applications at 689.449 nm. The devices achieved an optical output power of up to 88 mW, four times more than previously reported, as well as a spectral linewidth of 0.4 MHz. [ABSTRACT FROM AUTHOR]

The authors report on design, fabrication, and electro‐optical characterization of single‐frequency diode lasers emitting around 696, 707, and 712 nm. This has been achieved by a variation of the periods of the 10th order surface Bragg gratings implemented on a single epitaxial wafer. Depending on the wavelength, the devices achieved an optical output power of up to 60 mW at a current of 150 mA and spectral linewidths of about 400 kHz (full width at half maximum (FWHM)) and 20 kHz (Lorentzian). [ABSTRACT FROM AUTHOR]

Compact laser sources with long coherence lengths in the visible spectral region are sought for many applications. This letter presents distributed-Bragg-reflector (DBR) ridge-waveguide (RW) lasers with an emission wavelength at 633 nm and an optical output power >20~mW. The DBR-RW lasers exhibit a technical linewidth at full width at half maximum of \sim1~MHz. The emission line can be tuned via current and temperature >200~GHz. At 14 mW, the lasers show a preliminary lifetime >4000~h. [ABSTRACT FROM PUBLISHER]