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The crystal growth, optical spectra and lifetime of Dy:CaGdAlO 4 crystal were investigated for the first time to our best knowledge. Single Dy:CaGdAlO 4 crystal with size of Φ4 × 40 mm 3 was grown by floating zone method. The peak absorption cross-sections were calculated to be 2.43 × 10 −21 cm 2 and 1.28 × 10 −21 cm 2 at 453 nm for σ and π polarizations. The Judd-Ofelt (JO) parameters of Ω 2 , Ω 4 and Ω 6 were calculated to be 1.8 × 10 −20 cm 2 , 1.0 × 10 −20 cm 2 and 0.5 × 10 −20 cm 2 , respectively. The emission cross-sections were calculated to be 0.51 × 10 −20 cm 2 and 0.55 × 10 −20 cm 2 for σ and π polarizations. The fluorescence decay time is 222 μs. The results indicate that the Dy:CaGdAlO 4 crystal is a potential candidate for yellow laser operation. [ABSTRACT FROM AUTHOR]

In this paper, we describe a thulium-doped (Lu,Y) 3 Al 5 O 12 mixed crystal that was designed and grown to achieve a large pulse energy in Q-switched laser operation. Its absorption cross-sections at 781.3 nm and 1629.2 nm were calculated to be 3.4 × 10 −21 cm 2 and 5 × 10 −21 cm 2 , respectively, and the emission cross-section at 2018.3 nm was calculated to be 1.92 × 10 −21 cm 2 . The highest single pulse energy of 1.4 mJ near 2.02 μm was realized in an actively Q-switched solid-state laser, and further power scaling was just limited by the damage of the crystal coating. Based on the calculated spectrum parameters, theoretical simulation of the single pulse energy that considering the cross-relaxation process was proposed, which was well consistent with the experimental results. [ABSTRACT FROM AUTHOR]

Highlights: [•] Ce doped Al2O3−YAG eutectic has been successfully grown by the Czochralski method. [•] The eutectic has a higher segregation coefficient of Ce3+ than YAG single crystal. [•] Photoluminescence properties of Ce-doped Al2O3–YAG eutectic were investigated. [•] Variouswhitecolourscouldbeobtainedasrequired,byvaryingtheeutecticphosphorthickness. [•] The distinctive structure of eutectic made it have a better performance in LED than particle-dispersed system. [ABSTRACT FROM AUTHOR]

Abstract: We report on the sub-100fs pulse generation in a diode pumped Yb3+:Sc2SiO5 (Yb:SSO) laser. Pumped by a 976nm single emitter diode and mode-locked with a SESAM, the laser generated stable mode locked pulses with 71fs duration, 89MHz repetition rate, and an average power of 38mW at 1044.6nm under the incident pump power of 6.5W. To the best of our knowledge, this is the shortest pulse ever produced from an Yb3+ doped orthosilicate crystal laser. [Copyright &y& Elsevier]