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Pr-doped Cu2O films were deposited on Cu sheet substrates by hydrothermal method with different doping concentrations of Pr(NO3)3. The result shows that undoped and Pr-doped Cu2O thin films are all p-type semiconductors. Compared with undoped Cu2O, the photovoltage, photocurrent density, and carrier concentration of Pr-doped Cu2O increase to 0.4401 V, 1.1 mA/cm2, and 9.66 × 1019 cm−3, respectively. And the increments are 0.0828 V, 0.52 mA/cm2, and 8.931 × 1019 cm−3, respectively. The increments of the capacitances of Pr doping modification illustrate that Pr element has a strong passivation effect on the composite of electrons and holes, thus improving the photoelectric performance of Cu2O. The preferential growth surface of Pr-doped Cu2O film is (111) and (200), and the crystallinity of (111) plane is optimal. After doping modification, the grain size of Pr-doped Cu2O is increased and the particle size is relatively uniform. The mass percentage of Pr element is 0.46% and the forbidden band width reduces from 2.02 to 1.83 eV. XPS peak fitting of Pr-doped Cu2O indicates that Pr element is doped into Cu2O film.

F-doped Cu2O films were deposited on Cu sheet substrates by hydrothermal method with different doping concentrations of F−. The structure, morphology, composition and forbidden bandwidth of the samples were characterized by XRD, SEM, EDS, UV–Vis and XPS. The photoelectric properties, capacitance-voltage and AC impedance characteristics were also studied. The undoped and F-doped Cu2O thin films are all p-type semiconductors. When the doping concentration of F− is 0.002 mol/L, the preferential growth surfaces are (110), (111) and (200), and the crystallinity of (111) plane is optimal. After doping, the grain size of F-doped Cu2O is relatively uniform. The mass percentage of F element is 0.34% and the forbidden bandwidth reduces from 1.96 eV to 1.91 eV. Photovoltage and photocurrent density increase to 0.4457 V and 2.79 mA/cm2, respectively. And the carrier concentration increases from 4.55 × 1018 to 2.58 × 1022 cm−3. The resistance value under light reduces from 183.4 Ω to 55.8 Ω.

This paper presents a novel approach for preparing titanium dioxide nanotube arrays (TNTs) loaded with highly dispersed Br through an ultrasound aided photochemical route. The content of Br doped on the arrays was controlled by changing the concentration of NaBr and the ultrasound time. The Br doped TiO2nanotube arrays were characterized by SEM, XRD and UV–Vis spectrum. Doping the bromine did not basically affect the morphology of the surface of the TNTs, but part of the anatase phase transformed into rutile phase, which led to the formation of the mixed crystal and increased the photocatalytic activity. The results showed that Br doping significantly enhanced the photocatalytic degradation rate of titanium dioxide nanotube arrays under UV-light irradiation. The main factors which affected photocatalytic degradation of sugar wastewater were the illumination time and pH. The results showed that the longer the exposure time was, the initial pH of wastewater was more favorable to photocatalytic degradation of the sugar wastewater for the Br-TiO2nanotube arrays, and compared to undoped TiO2nanotube arrays Br doped TiO2nanotube arrays had better photocatalytic properties.