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Memory system performance is measured by access latency and bandwidth, and DRAM access parallelism critically impacts for both. To improve DRAM parallelism, previous research focused on increasing the number of effective banks by sub-dividing one physical bank. We find that without avoiding conflicts on the shared resources among (sub)banks, the benefits are limited. We propose mechanisms for efficient DRAM resource utilization and resource-conflict avoidance (ERUCA). ERUCA reduces conflicts on shared (sub)bank resources utilizing row address locality between sub-banks and improving the DRAM chip-level data bus. Area overhead for ERUCA is kept near zero with a unique implementation that exploits under-utilized resources available in commercial DRAM chips. Overall ERUCA provides 15% speedup while incurring

DRAM row and column sparing cannot efficiently tolerate the increasing inherent fault rate caused by continued process scaling. In-DRAM ECC (IECC), an appealing alternative to sparing, can resolve inherent faults without significant changes to DRAM, but it is inefficient for highly-reliable systems where rank-level ECC (RECC) is already used against operational faults. In addition, DRAM design in the near future (possibly as early as DDR5) may transfer data in longer bursts, which complicates high-reliability RECC due to fewer devices being used per rank and increased fault granularity. We propose dual use of on-chip redundancy (DUO), a mech- anism that bypasses the IECC module and transfers on-chip redundancy to be used directly for RECC. Due to its increased redundancy budget, DUO enables a strong and novel RECC for highly-reliable systems, called DUO SDDC. The long codewords of DUO SDDC provide fundamentally higher detection and correction capabilities, and several novel secondary-correction techniques integrate together to further expand its correction capability. According to our evaluation results, DUO shows performance degradation on par with or better than IECC (average 2–3%), while consuming less DRAM energy than IECC (average 4–14% overheads). DUO provides higher reliability than either IECC or the state-of-the-art ECC technique. We show the robust reliability of DUO SDDC by comparing it to other ECC schemes using two different inherent fault-error models.

As process technology scales down, DRAMs become less reliable since current DRAM protection schemes cannot address scaling-induced errors effectively. In prior related work, faulty DRAM cells or inherent faults have been considered as permanent and easily detectable during manufacturing process. However, due to scaling, more errors occur intermittently during system operations and exacerbate DRAM reliability. To consider the increasing intermittent errors due to scaling, we propose a new error model using DRAM’s Variable Retention Time (VRT). Our model effectively describes latent inherent faults, which lead to intermittent errors, in addition to the permanent inherent faults. We also introduce an efficient methodology to accelerate simulations even with a myriad of inherent faults. We present parameter sweep results to provide better understanding or insight regarding DRAM scaling errors.

Because main memory is vulnerable to errors and failures, large-scale systems and critical servers utilize error checking and correcting (ECC) mechanisms to meet their reliability requirements. We propose a novel mechanism, Frugal ECC (FECC), that combines ECC with fine-grained compression to provide versatile protection that can be both stronger and lower overhead than current schemes, without sacrificing performance. FECC compresses main memory at cache-block granularity, using any left over space to store ECC information. Compressed data and its ECC information are then frequently read with a single access even without redundant memory chips; insufficiently compressed blocks require additional storage and accesses. As examples, we present chipkill-correct ECCs on a non-ECC DIMM with x4 chips and the first true chipkill-correct ECC for x8 devices using an ECC DIMM. FECC relies on a new Coverage-oriented-Compression that we developed specifically for the modest compression needs of ECC and for floating-point data.

Growing computer system sizes and levels of integration have made memory reliability a primary concern, necessitating strong memory error protection. As such, large-scale systems typically employ error checking and correcting codes to trade redundant storage and bandwidth for increased reliability. While stronger memory protection will be needed to meet reliability targets in the future, it is undesirable to further increase the amount of storage and bandwidth spent on redundancy. We propose a novel family of single-tier ECC mechanisms called Bamboo ECC to simultaneously address the conflicting requirements of increasing reliability while maintaining or decreasing error protection overheads. Relative to the state-of-the-art single-tier error protection, Bamboo ECC codes have superior correction capabilities, all but eliminate the risk of silent data corruption, and can also increase redundancy at a fine granularity, enabling more adaptive graceful downgrade schemes. These strength, safety, and flexibility advantages translate to a significantly more reliable memory system. To demonstrate this, we evaluate a family of Bamboo ECC organizations in the context of conventional 72b and 144b DRAM channels and show the significant error coverage and memory lifespan improvements of Bamboo ECC relative to existing SEC-DED, chipkill-correct and double-chipkill-correct schemes.