1. Demonstration of Low Vt Ni-FUSI N-MOSFETs With SiON Dielectrics by Using a Dy2O3 Cap Layer.
- Author
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Yu, H. Y., Chang, S. Z., Veloso, A., Lauwers, A., Adelmann, C., Onsia, B., Lehnen, P., Kauerauf, T., Brus, S., Yin, K. M., Absil, P., and Biesemans, S.
- Subjects
DIELECTRICS ,EXCITON theory ,ELECTRICAL engineering materials ,FERROELECTRICITY ,ELECTRIC insulators & insulation ,DYSPROSIUM ,ELECTRONIC materials ,ELECTRIC resistance ,INSULATING materials - Abstract
This letter reports a novel approach to achieve low threshold voltage (V
t ) Ni-FUlly-SIlicide (FUSI) nMOSFETs with SiON dielectrics. By using a Dysprosium-oxide (Dy2 O3 ) cap layer with a thickness of 5 Å on top of the SiON host dielectrics, Vt,lin of 0.18 V for long-channel devices (Lg = 1 μm) using NiSi-FUSI electrode is obtained, satisfying the high-performance device requirements. The Vt modulation due to the Dy2 O3 cap layer is also maintained in the short-channel devices (with an Lg,min of 90 nm as demonstrated in this letter). In particular, approximately 150 × reduction in gate leakage current is seen while preserving the dielectric capacitance equivalent thickness after adding the Dy2 O3 cap layer on SiON dielectrics, likely due to a high-k layer (DySiON) formation during device source/drain activation process. We also report that the Dy2 O3 layer does not vitally degrade the device reliability, such as positive-bias temperature instability and time-dependant dielectrics breakdown. [ABSTRACT FROM AUTHOR] more...- Published
- 2007
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