1. RBS and PIXE analysis of chlorine contamination in ALD-Grown TiN films on silicon.
- Author
-
Meersschaut, J., Käyhkö, M., Lenka, H. P., Witters, T., Zhao, Q., Vantomme, A., and Vandervorst, W.
- Subjects
PROTON-induced X-ray emission ,CHLORINE ,TITANIUM nitride films ,SILICON ,TRACE elements ,EFFECT of temperature on metals ,RUTHERFORD backscattering spectrometry - Abstract
The performance, strengths and limitations of RBS and PIXE for the characterization of trace amounts of Cl in TiN thin films are critically compared. The chlorine atomic concentration in ALD grown TiN thin films on Si is determined for samples grown at temperatures ranging from 350°C to 550°C. We show that routine Rutherford backscattering spectrometry measurements (1.5 MeV He
+ ) and PIXE measurements (1.5 MeV H+ ) on 20 nm thick TiN films allow one to determine the Cl content down to 0.3 at% with an absolute statistical accuracy reaching 0.03 at%. Possible improvements to push the sensitivity limit for both approaches are proposed. [ABSTRACT FROM AUTHOR]- Published
- 2013
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