1. Transistor dc design considerations
- Author
-
Cressler, John D., Comfort, James H., Crabbe, Emmanuel F., Patton, Gary L., Stork, Johannes M.C., Sun, Jack Y.-C., and Meyerson, Bernard S.
- Subjects
Silicon compounds -- Research ,Electric circuits -- Direct current ,Bipolar transistors -- Research ,Business ,Electronics ,Electronics and electrical industries - Abstract
Considerations for direct current design in relation to the optimal epitaxial silicon- and silicon-germanium (SiGe)-base bipolar transistors for liquid nitrogen temperature (LNT) conditions are analyzed. Results show that the thin and abrupt base profiles processed epitaxially are conducive to low-temperature operations. LNT conditions also encourage a vertical profile with lightly doped spacer layers and a graded-bandgap SiGe base.
- Published
- 1993