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Silicon carbide (SiC) based power semiconductor devices are now considered as key components for future power applications where high power density, high temperature, and high ruggedness against radiation are key parameters, thanks to the exceptional material properties including lower conduction and switching losses offered by the SiC devices. This paper deals with static and dynamic measurements performed for SiC-based bipolar junction transistors power modules with voltage rating 1200 V and current rating 800 A. The power modules are fabricated in flexible half-bridge configuration in order to allow either full power module with 2400 V and 800 A as one power switch or by using two parallel 1200 V and 400 A half-bridge legs. Results from engineering samples show overall good confidence as promised by the manufacturer for most of the transistor samples. A 40–50% reduction in the current gain was observed when temperature was increased to 475 K as expected. Bipolar devices have been found out fairly stable under continuous static operation at nominal current levels. [ABSTRACT FROM AUTHOR]

In high-power converter design, insulated gate bipolar transistor (IGBT) modules are often operated in parallel to reach high output currents. Evaluating the electrical and thermal behavior of the parallel IGBTs is crucial for the design and reliable operation of converter systems. This paper investigates the static and dynamic characterization of parallel IGBTs and the influence of the electrical parameters on the IGBT behavior. Si-based IGBT power modules with voltage rating of 4.5 kV and current rating of 1 kA are used for the experimental evaluation of module parallel connections. Parallel-connected modules have been driven by several commercial IGBT gate units at various dc-link voltages and current levels and with different temperatures. The tested IGBT gate units show good current sharing performance between the two parallel modules. Other important influencing factors such as busbar design layout, stray inductance variation, and gate driving are also investigated for parallel connections of IGBT modules. Finally, the switching energy of the parallel modules is extracted for IGBTs and diodes under different conditions. [ABSTRACT FROM AUTHOR]