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A novel SiC junction field-effect transistor (JFET) model that uses a unified description of linear and saturated conduction modes is proposed. Advantages of the proposed model are improved robustness and convergence, inclusion of field-dependent mobility effects, and more physical description of the current saturation phenomenon. The model is validated against a normally off JFET sample over a wide temperature range. Finite-element simulations are used to demonstrate the physics-based nature of the proposed model. [ABSTRACT FROM AUTHOR]

In this paper, a physical model for a SiC Junction Field Effect Transistor (JFET) is presented. The novel feature of the model is that the mobility dependence on both temperature and electric field is taken into account. This is particularly important for high-current power devices where the maximum conduction current is limited by drift velocity saturation in the channel. The model equations are described in detail, emphasizing the differences introduced by the field-dependent mobility model. The model is then implemented in Pspice. Both static and dynamic simulation results are given. The results are validated with experimental results under static conditions and under resistive and inductive switching conditions. [ABSTRACT FROM AUTHOR]