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In this work, we present the floating field plate (FFP) that a novel structure modulates the electric field in beta gallium oxide (β-Ga2O3) power devices and integrated circuit modules. By reducing the peak electric field during reverse high-voltage operation, the FFP improves the device's performance while maintaining its forward characteristics. Compared with the traditional field plate structure, the FFP increases the power figure of merit by 34.9% with the same device parameters and reduces the dielectric material requirement by 52% as the same device blocking voltage. We also establish a relationship between different dielectric materials (SiO2, Al2O3, Si3N4, etc.) and the optimal structure size through simulation. More importantly, the FFP can be applied to β-Ga2O3 power modules and optimize the electric field distribution regionally, thereby improving the system's robustness. This study provides a new solution for enhancing the performance of β-Ga2O3 devices and advancing β-Ga2O3 power modules. [ABSTRACT FROM AUTHOR]

In this article, for the first time, a variation of lateral doping (VLD) technique was proposed to improve blocking voltage and ON-resistance properties in the lateral β-Ga2O3 metal–oxide–semiconductor field-effect transistor (MOSFET). Enhancement-mode operation was achieved in the VLD transistor. The maximum transconductance of this new device is more than three times as large as the uniformly doped (UD) transistor. Moreover, the OFF-state electric field at the channel was suppressed compared to the UD transistor, resulting in higher blocking voltage. We also investigated the optimal device properties with changing channel concentration in the drift region of VLD transistor. A power figure of merit of 332.7 MW/cm2 was reached by VLD design. Thus, this proposed structure provides a new design strategy for high-power β-Ga2O3 MOSFETs. [ABSTRACT FROM AUTHOR]

Herein, high‐performance enhancement‐mode (E‐mode) β‐Ga2O3 metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) are achieved on Si‐doped homoepitaxial films. Oxygen annealing (OA) treatment under the gate region is used to effectively exhaust the channel electron, resulting in the normally off operation of the device. The threshold voltage, defined as that at the drain current of 0.1 mA mm−1, for the fabricated device is extracted to be 4.1 V. Moreover, double source‐connected field plates are used to suppress the peak electric fields in both Ga2O3 channel and SiNx passivation layer. The fabricated β‐Ga2O3 MOSFETs with gate‐to‐drain distance (Lgd) of 17 μm exhibit a record high breakdown voltage over 3000 V. It is shown that the OA treatment is a new way to obtain high‐performance E‐mode β‐Ga2O3 power MOSFETs. [ABSTRACT FROM AUTHOR]