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We studied low frequency power spectral density (PSD) of drain current, Id, fluctuations in organic materials field effect transistors, (OMFETs), with pentacene and polytriarylamine channels and analyzed the data using parameters extracted from Id(Vg) characteristics, following a procedure developed for Si MOSFETs. We found that PSD spectra (i) vary as 1/f, (ii) show Idα, with α≈2, amplitude variation, and (iii) scale with the gate surface. That provides some elements for constructing a model for noise generation in OMFETs and for normalization of PSD data. We show that normalized noise amplitude in OMFETs can be up to 103 times higher than in their Si counterparts. [ABSTRACT FROM AUTHOR]

We studied current-voltage, I(V) and low frequency noise, LFN, characteristics of SiO2 capacitors with a varying SiO2 thickness, tox, and the active surface area, A. The tunneling current was found to vary as exp(-tox/λ), with λ=0.1nm, λ slightly increasing with the applied voltage. The LFN spectral power density, SI, was observed to obey the 1/f type dependence and could be characterized in the SPICE formalism SI = KI2/fA, with 10-13cm2

This paper presents the main results of our study on the low-frequency noise characteristics of ultrathin oxide gate oxide MOSFETs representative of several sub 90 nm CMOS technologies. Simple analytical models for this device are presented and used for interpretation of noise measurements. For the noise data interpretation, a simple drain and gate current noise model based on a flat band voltage fluctuation concept are developed and were shown to account for the overall drain current and gate current noise behavior. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]