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The electrical properties of light-emitting field-effect transistors with Er3+ doped gate oxides formed either by a Si-rich oxide or by a SiO2 are studied. Measured output and transfer characteristics in combination with C- V curves allowed for the main device parameters determination (flat-band voltage, Debye length, or low-field mobility). Decreased threshold voltage, interface charge trapping and low-field mobility enhancement in devices containing Si-rich oxides respect to those with Er3+ doped SiO2 gate are found. In addition, the implantation of Er3+ ions in the gate oxide produced significant low-field mobility reduction in the transistor inversion layer. Typical polarization scheme and device cross section of a light-emitting field-effect transistor (left). Erbium electroluminescence spectrum collected from the top of the polysilicon gate (right). [ABSTRACT FROM AUTHOR]

The electrical and electroluminescence (EL) properties at room and high temperatures of oxide/nitride/oxide (ONO)-based light emitting capacitors are studied. The ONO multidielectric layer is enriched with silicon by means of ion implantation. The exceeding silicon distribution follows a Gaussian profile with a maximum of 19%, centered close to the lower oxide/nitride interface. The electrical measurements performed at room and high temperatures allowed to unambiguously identify variable range hopping (VRH) as the dominant electrical conduction mechanism at low voltages, whereas at moderate and high voltages, a hybrid conduction formed by means of variable range hopping and space charge-limited current enhanced by Poole-Frenkel effect predominates. The EL spectra at different temperatures are also recorded, and the correlation between charge transport mechanisms and EL properties is discussed. [ABSTRACT FROM AUTHOR]