1. A Novel Deep Junction Edge Termination for Superjunction MOSFETs.
- Author
-
Cheng, Chia-Hui, Huang, Chih-Fang, Lee, Kung-Yen, and Zhao, Feng
- Subjects
METAL oxide semiconductor field-effect transistors ,JUNCTION transistors ,ELECTRIC potential - Abstract
In this letter, a novel edge termination named deep junction termination for silicon superjunction (SJ) MOSFETs is proposed, simulated, and experimentally demonstrated for the first time. By utilizing a typical implantation-and-epitaxy process to form P- and N-pillars for SJ, it is possible to form deep junctions as the device termination with a large radius of curvature and lateral and vertical doping gradation. The 2-D simulation shows that more than 700-V blocking voltage (BV) can be achieved by a 57- \mu \textm drift layer with this novel termination, and experimentally BV as high as 660 V is demonstrated by the fabricated device. [ABSTRACT FROM AUTHOR]
- Published
- 2018
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