1. Characterization and modeling of SET/RESET cycling induced read-disturb failure time degradation in a resistive switching memory.
- Author
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Po-Cheng Su, Chun-Chi Hsu, Sin-I Du, and Tahui Wang
- Subjects
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NONVOLATILE random-access memory , *TUNGSTEN oxides , *ELECTRIC switchgear , *ELECTRIC potential , *VAPOR-plating - Abstract
Read operation induced disturbance in SET-state in a tungsten oxide resistive switching memory is investigated. We observe that the reduction of oxygen vacancy density during read-disturb follows power-law dependence on cumulative read-disturb time. Our study shows that the SET-state readdisturb immunity progressively degrades by orders of magnitude as SET/RESET cycle number increases. To explore the cause of the read-disturb degradation, we perform a constant voltage stress to emulate high-field stress effects in SET/RESET cycling. We find that the read-disturb failure time degradation is attributed to high-field stress-generated oxide traps. Since the stressgenerated traps may substitute for some of oxygen vacancies in forming conductive percolation paths in a switching dielectric, a stressed cell has a reduced oxygen vacancy density in SET-state, which in turn results in a shorter read-disturb failure time. We develop an analytical read-disturb degradation model including both cycling induced oxide trap creation and read-disturb induced oxygen vacancy reduction. Our model can well reproduce the measured read-disturb failure time degradation in a cycled cell without using fitting parameters. [ABSTRACT FROM AUTHOR]
- Published
- 2017
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