1. High efficiency continuous mode RF power amplifier based on second and third harmonic manipulation
- Author
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Thamir R. Saeed, Firas M. Ali, and Mahmuod H. Al-Muifraje
- Subjects
Physics ,Frequency band ,business.industry ,Amplifier ,Bandwidth (signal processing) ,RF power amplifier ,Electrical engineering ,High-electron-mobility transistor ,Power (physics) ,Hardware_INTEGRATEDCIRCUITS ,Waveform ,Electrical and Electronic Engineering ,business ,Voltage - Abstract
Continuous mode class-J radio-frequency (RF) power amplifier is a promising technique that extends the operating bandwidth of the conventional class-B power amplifier. However, the maximum theoretical efficiency is limited to that of the class-B power amplifier. In this paper, an enhanced mode of operation for the class-J power amplifier is proposed by incorporating a third harmonic voltage component to produce an optimum waveform for maximizing the fundamental voltage component and thereby to increase the drain efficiency and introduce a new design space. A detailed derivation for the necessary relations of output power, drain efficiency, and the required harmonic load impedances is provided, showing a significant improvement in theoretical maximum efficiency from 78.5 to 89.8%. In order to confirm the developed analytic approach, a 10 W prototype amplifier model was designed and fabricated to operate within the global system for mobile communications (GSM) frequency band 850–950 MHz using a commercial GaN power high electron mobility transistor (HEMT). The experimental results have indicated that the drain efficiency of the circuit varies from 68 to 80% within the desired band.
- Published
- 2020