6 results on '"Xinyi Wen"'
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2. Nanoporous GaN on p-type GaN: a Mg out-diffusion compensation layer for heavily Mg-doped p-type GaN
- Author
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Kwang Jae Lee, Yusuke Nakazato, Jaeyi Chun, Xinyi Wen, Chuanzhe Meng, Rohith Soman, Maliha Noshin, and Srabanti Chowdhury
- Subjects
Mechanics of Materials ,Mechanical Engineering ,General Materials Science ,Bioengineering ,General Chemistry ,Electrical and Electronic Engineering - Abstract
Embedding p-type gallium nitride (p-GaN) with controlled Mg out-diffusion in adjacent epitaxial layers is a key for designing various multi-junction structures with high precision and enabling more reliable bandgap engineering of III-nitride-based optoelectronics and electronics. Here, we report, for the first time, experimental evidence of how nanoporous GaN (NP GaN) can be introduced as a compensation layer for the Mg out-diffusion from p-GaN. NP GaN on p-GaN provides an ex-situ formed interface with oxygen and carbon impurities, compensating for Mg out-diffusion from p-GaN. To corroborate our findings, we used two-dimensional electron gas (2DEG) formed at the interface of AlGaN/GaN as the indicator to study the impact of the Mg out-diffusion from underlying layers. Electron concentration evaluated from the capacitance-voltage measurement shows that 9 × 1012 cm−2 of carriers accumulate in the AlGaN/GaN 2DEG structure grown on NP GaN, which is the almost same number of carriers as that grown with no p-GaN. In contrast, 2DEG on p-GaN without NP GaN presents 9 × 109 cm−2 of the electron concentration, implying the 2DEG structure is depleted by Mg out-diffusion. The results address the efficacy of NP GaN and its’ role in successfully embedding p-GaN in multi-junction structures for various state-of-the-art III-nitride-based devices.
- Published
- 2022
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3. Low-grade waste heat driven desalination with an open loop heat pipe
- Author
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Changzheng Li, Xinyi Wen, Xiantao Zhang, Xuejiao Hu, and Yuxi Liu
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Work (thermodynamics) ,Materials science ,020209 energy ,Mechanical Engineering ,Nuclear engineering ,Evaporation ,02 engineering and technology ,Building and Construction ,Pollution ,Desalination ,Industrial and Manufacturing Engineering ,Heat pipe ,General Energy ,Waste heat ,Vaporization ,0202 electrical engineering, electronic engineering, information engineering ,Electrical and Electronic Engineering ,Condenser (heat transfer) ,Evaporator ,Civil and Structural Engineering - Abstract
An innovative low-grade heat driven desalination system inspired by heat pipe is proposed in this work. The system utilizes siphon force to create vacuum environment for seawater evaporation at much lower temperature which can significantly reduce energy consumption. The capillary force of the NiO wick pumps the seawater to the evaporator and pushes the generated vapor to the condenser without using any additional mechanical equipment. Localized vaporization in the micro channels of the NiO wick's surface further improves the heat utilization efficiency. Experimental results show that nearly 3.88 kg/(m2·h) of distilled water production rate can be produced at the heat source temperature as low as 34 °C and this value can be increased to 55.25 kg/(m2·h) at the temperature of 60 °C. The corresponding heat-conversion efficiency is 65.2% and 90.7%, respectively, which is much higher than that of most conventional desalination techniques. With the very low temperature operation condition and high efficiency, this novel technology may provide an efficient approach to harvest low-grade heat for fresh water production.
- Published
- 2018
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4. The Effect of La-Doped Bi4Ti3O12 Buffer Layer on Crystallinity and Ferroelectric Properties of PbZr0.58Ti0.42O3/Bi3.25La0.75Ti3O12 Multilayered Thin Films
- Author
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Jianjun Li, Jun Yu, Yunyi Wu, and Xinyi Wen
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Diffraction ,Materials science ,Doping ,Condensed Matter Physics ,Ferroelectricity ,Grain size ,Electronic, Optical and Magnetic Materials ,Crystallinity ,Control and Systems Engineering ,Sputtering ,Materials Chemistry ,Ceramics and Composites ,Electrical and Electronic Engineering ,Thin film ,Composite material ,Layer (electronics) - Abstract
PbZr0.58Ti0.42O3 (PZT) ferroelectric thin films with Bi3.25La0.75Ti3O12 (BLT) buffer layer of various thickness were fabricated on Pt/TiO2/SiO2/p-Si(100) substrates by rf-magnetron sputtering method. The pure PZT film showed (111) preferential orientation in the XRD patterns, and the PZT/BLT films showed (110) preferential orientation with increasing thickness of the BLT layer. There were no obvious diffraction peaks for the BLT buffer layer, for its thin thickness in PZT/BLT multilayered films. There were the maximum number of largest-size grains in PZT/BLT(30 nm) film among all the samples from the surface images of FESEM. The growth direction and grain size had significant effects on ferroelectric properties of the multilayered films. The fatigue characteristics suggested that 30-nm-thick BLT was just an effective buffer layer enough to alleviate the accumulation of oxygen vacancies near the PZT/BLT interface. The comparison of these results suggests that the buffer layer with an appropriate thickness ...
- Published
- 2011
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5. STUDIES ON THE FATIGUE BEHAVIOR OF FERROELECTRIC FILM USING PREISACH APPROACH
- Author
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Wenli Zhou, Kan-Hao Xue, Tian-Ling Ren, Xinyi Wen, Jun Yu, and Yunbo Wang
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Materials science ,Control and Systems Engineering ,Materials Chemistry ,Ceramics and Composites ,Statistical physics ,Electrical and Electronic Engineering ,Condensed Matter Physics ,Measure (mathematics) ,Ferroelectricity ,Expression (mathematics) ,Electronic, Optical and Magnetic Materials - Abstract
The PREISACH approach is applied to provide further insight into the physical mechanisms of ferroelectric operation and degradation. Starting from the discussion on experimental determined PREISACH distribution, analytical formulae for the various fatigue cycles is deduced. Considerations about the uniform expression respects to the cycle numbers, and the ways to describe it are also made. The agreement between the measure and calculation illustrate such a description to be an efficient tool to model the ferroelectric fatigue behavior. This approach is also utilized to examine nature of cycling degradation, the excursion of defect charge and their effect on domain pinning is characterized quantificationally. This model seems quite appropriate to relate the degenerative loops with the actual defect structure.
- Published
- 2008
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6. AN INNOVATED PROCESS OF Pt/PbTiO3/PbZr0.3Ti0.7O3/PbTiO3/Pt INTEGRATED FERROELECTRIC CAPACITORS FOR FeRAM
- Author
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Jun Yu, Tian-Ling Ren, Xinyi Wen, Feng Liu, Junxiong Gao, Longhai Wang, Yunbo Wang, and Chao-Gang Wei
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Materials science ,business.industry ,Condensed Matter Physics ,Ferroelectricity ,Ferroelectric capacitor ,Electronic, Optical and Magnetic Materials ,law.invention ,Capacitor ,Control and Systems Engineering ,law ,Etching (microfabrication) ,Phase (matter) ,Ferroelectric RAM ,Electrode ,Materials Chemistry ,Ceramics and Composites ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Perovskite (structure) - Abstract
An innovated and the typical one-mask-patterned integrated ferroelectric capacitors process with Sol-Gel deposited technique are investigated. The key improvement for the innovated route is that the ferroelectric film was etched in non-crystalline phase. Due to the etching damage, the ferroelectric and fatigue properties of the typical integrated capacitor were degradation, and the desquamation of top electrode was also existed. The uniformly Pt/PbTiO3/PbZr0.3Ti0.7O3/PbTiO3/Pt (Pt/PT/PZT/PT/Pt) integrated ferroelectric capacitor arrays with explicit and smooth side-wall were obtained by the innovated integrated process. The XRD results exhibit that the innovated integrated ferroelectric capacitor was well crystallized, and the ferroelectric film belongs to the perovskite phase. The etching degradation on the properties of the innovated integrated ferroelectric capacitor was reduced to minimize, confirmed by SEM, EDX results, the ferroelectic and fatigue properties. The innovated process can be co...
- Published
- 2007
- Full Text
- View/download PDF
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