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The paper deals with an experimental investigation of the behavior of high-frequency Si/SiO2/Al based interconnects when an extra DC bias voltage is applied, by means of which the conductor line changes the surface properties of the semiconductor substrate. By superposing a DC bias to the high-speed signal applied to the line, the insertion losses caused by the semiconductor substrate show a significant decrease over the observed frequency range. In order to study this effect a number of test samples containing several microstrip asymmetric transmission lines were prepared and measured. The obtained results suggest a way of controlling the performance and energy propagation of interconnects on semiconductor substrates. The observed effect can be successfully applied in high-speed blocks with tunable parameters.

In this paper we present recent studies on the electrochemical migration processes in Ag thin film parallel microstrip lines in MCM(D) structures. The basic concept is applying accelerated local drop‐test of water solutions onto the surface of two adjacent lines, under a given voltage potential. These operational conditions are often met in the interconnection line buses, placed in the top assembly level of multilayered hybrid structures. The subject of investigations are MCM(D) developed on Al‐sheet carrier with internal conducting and isolating layers, produced through unique selective electrochemical anodization of Al and Ta. This technology process also enables the creation of embedded R and C passive components on the base of TaOxN1‐x and Ta2O5 (or Al2O3) respectively. We propose an electrochemical deposition of Ag/Sb alloys on the surface of Al interconnection lines and contact pads to ease the bondability and solderability in chip mounting procedures. The artificially created silver migrated defects and partial shorts are investigated through the high frequency method of coupled transmission lines in order to eliminate the errors and insufficient validity of DC direct measurements.

In this paper, we investigate the interaction between redistribution traces and on-chip interconnects in memory chip packages. The electromagnetic interaction is shown both in the frequency and in the time domain. In addition the impact of this interaction on the performance of memory component(s) is explored.

In this paper, we present recent studies on the electromigration processes in Ag thin film parallel microstrip lines in MCM-D structures. The basic concept is application of accelerated local drop-tests of water solutions on the surfaces of two adjacent lines under a given voltage potential. These operational conditions are often met in the interconnection line buses placed in the top assembly level of multilayered hybrid structures. The subject of the investigations are MCM-Ds developed on an Al-sheet carrier with internal conducting and isolating layers, produced through unique selective electrochemical anodization of Al and Ta. This process technology also enables the creation of embedded R and C passive components based on TaO/sub x/N/sub 1-x/ and Ta/sub 2/O/sub 5/ (or Al/sub 2/O/sub 3/) respectively. We propose electrochemical deposition of Ag/Sb alloys on the surface of Al interconnection lines and contact pads to ease the bondability and solderability in chip mounting procedures. The artificially created silver migrated defects and partial shorts are investigated through the high frequency method of coupled transmission lines in order to eliminate the errors and insufficient validity of DC direct measurements.

Simulation and analysis of the electromagnetic behavior of 3D-MCM (multichip module) carrier structures by means of investigation on symmetric folded microstrip filters realised on their basis is proposed in the present paper. The technology for building multilayer high-speed MCM structures, based on Al carriers enables the development of multiple and multilayered interconnections combined with thin film integrated passive components-resistors and MIM capacitors-embedded in the whole structure. In order to study these material systems of interconnections, constructions of multilevel folded symmetric microstrip filters for 1.7 GHz were developed. An electromagnetic simulation of the various filter constructions was performed. RF measurements by means of a vector analyzer were carried out and compared with the simulated characteristics. The obtained measurement and simulation results were used to study successfully the electromagnetic characteristic as well as the parasitic high-frequency effect of interconnection, in order to achieve a reliable practical realisation of high rate production quality.