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Graphical abstract Highlights • Demonstration of low-cost organic (cellulose fiber) non-volatile memory device. • Excellent endurance for 6 × 103 resistive switching cycles with 10 x memory window. • Data retention is extended for the 3 × 102 seconds without any degradation. • Resistive switching is due to the formation and breaking of Ag filament. Abstract The present manuscript reports the development of Ag/cellulose fibers/Al memory device using the electrospinning technique. The morphological characterization suggested that the active layer is composed of micro-fibers. The developed device shows fingerprint pinched hysteresis loop of the memristive device in I–V plane without any additional electroforming step. An excellent endurance for 6 × 103 resistive switching cycles with 10 x memory window is achieved. Furthermore, the data retention capability of the developed device is extended for the 3 × 102 seconds without any observable degradation in the resistance states. The statistical results suggested that the high resistance state loosely distributed whereas tight distribution is observed for low resistance state. The electrical characterization results suggested that the formation and breaking of Ag conductive filament in the active cellulose fiber layer are responsible for the bipolar resistive switching effect. Our results suggested that the cellulose fibers based memristive device is a potential candidate for the organic non-volatile memory application. [ABSTRACT FROM AUTHOR]