1. Probing the persistence of energy-level control effects at organic semiconductor/electrode interfaces based on photoemission spectroscopy combined with Ar gas cluster ion beam sputtering
- Author
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JaeGwan Chung, Yongsu Kim, Taeho Shin, Youngsik Shin, Dong-Jin Yun, Sungjun Park, and Yongkoo Kyung
- Subjects
Photoluminescence ,Gas cluster ion beam ,Photoemission spectroscopy ,Chemistry ,General Chemical Engineering ,Analytical chemistry ,General Chemistry ,medicine.disease_cause ,Organic semiconductor ,Sputtering ,Electrode ,medicine ,Work function ,Ultraviolet - Abstract
Oxygen (O2) plasma treatment is one of the most widely applied methods for modifying the electrode work function. However, owing to the instability of O2-plasma treatment effects under air-exposed conditions, it is necessary to confirm whether the O2-plasma treatment effects can be continuously maintained at organic semiconductor/electrode interfaces in realistic devices. In the present study, the electronic structures of organic semiconductor/O2-plasma treated electrode interfaces were characterized by using in situ deposition and ultraviolet photoemission spectroscopy analysis. The structures of the corresponding samples were re-analyzed after a 1-week-long exposure to air to confirm the energy-level changes. To achieve this, we inceptively designed the studies of the energy level alignments of air-exposed samples based on the photoemission spectroscopy combined with Ar gas cluster ion beam sputtering process. The results of our studies clearly confirm the consistency of O2-plasma treatment effects at organic semiconductor/electrode interfaces. In addition, we confirmed the preservation of controlled energy-level structures at C60/Au interfaces by examining the relative rates of electron transfer at the C60/Au interfaces, obtained from photoluminescence (PL) measurements.
- Published
- 2015