Search

Presents a study that investigated the characteristics of a type of field-effect transistor (FET) whose channel consists of ultrafine metal particles between the source and drain electrodes. Background on tunneling for transistor applications; Examination of the semiconductor-like properties that should appear in the idealized discontinuous film used in the study; Analysis of activated tunneling FET characteristics.

Presents a study which fabricated high-quality, submicrometer niobium/aluminum oxide[subx]/niobium Josephson junctions. Information on the junction area; Importance of using stress-free niobium for the junction electrodes; Construction of the trilayer structure of the junction.

Reports on the transistor characteristics of a three-terminal structure having YBa[sub2]Cu[sub3]O[sub7-x] electrodes on an insulating SrTiO[sub3] substrate with an intervening NdGaO[sub3] barrier. Illustration of the device structure; Schematic band diagrams of emitter-grounded dielectric-base transistor.