1. −400 mA mm −1 Drain Current Density Normally-Off Polycrystalline Diamond MOSFETs.
- Author
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Zhu, Xiaohua, Shao, Siwu, Chang, Yuhao, Zhang, Runming, Chung, Sylvia Yuk Yee, Fu, Yu, Bi, Te, Huang, Yabo, An, Kang, Liu, Jinlong, Li, Chengming, and Kawarada, Hiroshi
- Subjects
METAL oxide semiconductor field-effect transistors ,FIELD-effect transistors ,DIAMONDS ,OHMIC contacts ,OHMIC resistance ,THRESHOLD voltage - Abstract
This letter reports a high drain current density and normally-off operation metal-oxide-semiconductor field-effect transistors (MOSFETs) with a gate insulator of 100 nm-Al2O3. A heavily boron-doped layer as the source/drain region was deposited on a (110) polycrystalline diamond substrate to achieve a low ohmic contact resistance. The MOSFETs demonstrate a maximum current density of −400 mA mm $^{-{1}}$ normalized by gate width and a maximum current density of $- 2000\,\,\mu \text{m}$ mA mm−1 normalized by gate length and gate width, which are the highest values for normally-off diamond FETs. The Grain boundaries (GBs) and the nitrogen impurities ($\sim {3}\,\,\times \,\,{10}^{{17}}$ cm $^{-{3}}$) as ionized donors in the channel region caused the threshold voltage (${V}_{\text {th}}$) to shift in the negative direction, exhibiting normally-off characteristics. This technique provides a promising method to achieve high-performance diamond devices, and help improve safety and save energy in switching systems. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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