1. Exploration of baking temperature effects on 28 nm BEOL reliability.
- Author
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Zhao, XiangFu and Chien, Wei Ting Kary
- Subjects
- *
RELIABILITY in engineering , *HIGH temperatures , *ELECTRODIFFUSION , *DISTRIBUTION (Probability theory) , *STRAINS & stresses (Mechanics) - Abstract
The effects of baking temperature on back-end-of-line (BEOL) reliability were explored on 28 nm technology node. We found that stress migration (SM) worse temperature showed up around 200 °C and apparent negative resistance (R) shifts appeared after baking at high temperatures. The Electromigration (EM) performance behaved the temperature dependence and the high baking temperature improved the main time-to-failure (TTF) distribution. Interlayer dielectric (ILD) time dependence dielectric breakdown (TDDB) performance was enhanced at low baking temperatures. [ABSTRACT FROM AUTHOR]
- Published
- 2017
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