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Hole injection through V-defect sidewalls into all quantum wells (QWs) of long wavelength GaN light emitting diodes had previously been proposed as means to increase efficiency of these devices. In this work, we directly tested the viability of this injection mechanism by electroluminescence and time-resolved photoluminescence measurements on a device in which QW furthest away from the p-side of the structure was deeper, thus serving as an optical detector for presence of injected electron–hole pairs. Emission from the detector well confirmed that, indeed, the holes were injected into this QW, which could only take place through the 10 1 ¯ 1 V-defect sidewalls. Unlike direct interwell transport by thermionic emission, this transport mechanism allows populating all QWs of a multiple QW structure despite the high potential barriers in the long wavelength InGaN/GaN QWs. [ABSTRACT FROM AUTHOR]

We investigate the unexpected high-energy electroluminescence (EL) peaks observed in long-wavelength InGaN light-emitting diodes (LEDs) with ground state emission peaks between ∼495 and 685 nm by studying the EL spectra of LEDs with varying quantum well (QW) thicknesses and indium compositions. In addition to the ground state emission, two high-energy emission peaks were observed in the LEDs with thick QWs and high indium compositions. The less energetic high-energy emission peak (2.4–2.6 eV) is attributed to the optical transitions involving excited states. Factors influencing the excited state transitions, such as the QW thickness and indium compositions, were also examined by simulations to better understand the occurrence of these transitions. The more energetic high-energy emission peak (2.8–3.1 eV) originates from V-defect sidewalls and was verified through micro-photoluminescence measurements. Identification of the high-energy emission peaks is essential as it enables targeted epitaxial or growth optimizations to minimize or eliminate these undesirable emission peaks. This work demonstrates the importance of using thin QWs to suppress the unwanted high-energy emissions due to excited state transitions and V-defect sidewalls for long-wavelength InGaN LEDs. [ABSTRACT FROM AUTHOR]

We present highly polarized dual wavelength semipolar InGaN micro-light-emitting diodes (μLEDs) by combining an indium tin oxide (ITO) surface grating and Al-coated dual-color surface plasmons (DSPs). The ITO grating DSPs enable a significant enhancement of the polarization ratio (PR) from electrically driven semipolar (20-21) μLEDs with dual emission wavelengths: the overall PR was increased by 1.7-folds and the output power was enhanced by 78% as compared to the conventional semipolar μLEDs at an injection current density of 100 A/cm2. Moreover, a high 3 dB modulation bandwidth of 612 MHz is achieved at ∼1.4 kA/cm2 in a visible-light communication (VLC) system, suggesting a near 1.24 Gbit/s under a non-return-to-zero on-off keying modulation scheme. This design marks significant progress in developing polarized μLEDs with potential applications in various fields, such as displays and VLC. [ABSTRACT FROM AUTHOR]

The compliant behavior of high fill-factor 10 × 10 μm2 square patterned 60–140 nm thick GaN-on-porous-GaN tiles was demonstrated by utilizing porous GaN as a semi-flexible underlayer. High resolution x-ray diffraction measurements showed a larger a-lattice constant of InGaN layers deposited on these patterned GaN-on-porous GaN pseudo-substrates in comparison to those deposited on co-loaded planar GaN-on-sapphire templates. Additionally, InGaN based light emitting diode (LED) structures deposited on these GaN pseudo-substrates exhibited room temperature electroluminescence at 547 nm compared to 506 nm for the LED structures grown on co-loaded planar GaN on sapphire templates, corresponding to a redshift of around 40 nm. The longer emission wavelength was associated with the higher indium incorporation into the InGaN quantum wells deposited on the compliant GaN pseudo-substrates, owing to a reduced lattice mismatch between the quantum well and the n-InGaN base layers grown on the compliant pseudo-substrates, due to the composition pulling effect. [ABSTRACT FROM AUTHOR]

Light polarization and emission spectra from InGaN/GaN quantum-well light-emitting diodes (LEDs) were investigated. The LEDs were prepared on the (1122) plane of wurtzite GaN. Polarization and spectrum measurement was performed at different observation angles with respect to the LED surface. Partially polarized electroluminescence was confirmed at any angle of observation, where the emission intensity tended to be greater when a polarizer was aligned along the c axis of the InGaN/GaN LED structure. The results clearly indicated the inclination of the c axis relative to the LED surface. As a result, two light polarizations were identified and they were assigned to two different electronic transitions in relation to emission peak energies. Possible alteration of the valence-band structure was suggested due to the induced strain. [ABSTRACT FROM AUTHOR]

The optical polarization ratio of spontaneous emission was investigated by electroluminescence measurements for semipolar [formula] InGaN/GaN light-emitting diodes, covering the blue to green spectral range. Devices fabricated on semipolar [formula] substrates exhibit polarization ratios ranging from 0.46 at 418 nm to 0.67 at 519 nm. These polarization ratios are significantly higher than those reported on semipolar [formula] devices. The valence band energy separation is extracted from spectral measurements and is consistent with the increased polarization ratio and theoretical predictions. Quantum well interdiffusion induced valence band mixing is suggested as a possible explanation for the low experimental value of polarization ratio observed for the [formula] devices. [ABSTRACT FROM AUTHOR]

We report on measurements of the photo-modulated current-voltage and electroluminescence characteristics of forward biased single quantum well, blue InGaN/GaN light emitting diodes with and without electron blocking layers. Low intensity resonant optical excitation of the quantum well was observed to induce an additional forward current at constant forward diode bias, in contrast to the usual sense of the photocurrent in photodiodes and solar cells, as well as an increased electroluminescence intensity. The presence of an electron blocking layer only slightly decreased the magnitude of the photo-induced current at constant forward bias. Photo-modulation at constant forward diode current resulted in a reduced diode bias under optical excitation. We argue that this decrease in diode bias at constant current and the increase in forward diode current at constant applied bias can only be due to additional hot carriers being ejected from the quantum well as a result of an increased Auger recombination rate within the quantum well. [ABSTRACT FROM AUTHOR]

We investigate carrier localization effect and recombination dynamics of 530 nm InGaN green light-emitting diodes (LEDs) using temperature-dependent photoluminescence (TDPL) and time-resolved photoluminescence (TRPL) methods. Two distinct emission peaks located in low-energy and high-energy sides were observed in PL spectrum at 10 K by Gaussian fitting. Both temperature-dependent blue-shift and TRPL decay time decreasing with photon energy of the two peaks indicate the presence of two localized states. Formation of In rich clusters in the InGaN wells was clearly observed by atom probe tomography (APT). Finally, the electroluminescent spectrum points out that both peaks originate from radiative recombination of localized states. [ABSTRACT FROM AUTHOR]