1. Optoelectronic Properties of Dual-wavelength InGaN/GaN Multi-quantum Well Light-emitting Diodes
- Author
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吴乾 Wu Qian, 范广涵 Fan Guang-han, 章勇 Zhang Yong, 郑树文 Zheng Shu-wen, 李述体 Li Shu-ti, 陈献文 Chen Xian-wen, and 何苗 He Miao
- Subjects
Materials science ,business.industry ,Chemical vapor deposition ,Electroluminescence ,Atomic and Molecular Physics, and Optics ,law.invention ,Optics ,law ,Sapphire ,Optoelectronics ,Metalorganic vapour phase epitaxy ,business ,Luminous efficacy ,Quantum well ,Light-emitting diode ,Diode - Abstract
In order to realize preferable white light-emitting diodes with high color rendering index and optimized luminous efficiency,white InGaN/GaN multi-quantum-well dual-wavelength light-emitting diodes(LEDs) were grown on(0001)-oriented sapphire substrates by metal-organic chemical vapor deposition(MOCVD).Photoluminescence and electroluminescence properties of dual-wavelength LEDs with different In content were also studied.The experimental results indicated that In component plays a critical role on stability for electroluminescence spectrum and luminous efficiency of the dual-wavelength LED structures.In addition,YAG∶Ce phosphor-converted white light emission with high color rendering index was achieved using dual-blue emitting active regions.
- Published
- 2011