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In this paper, we present our studies on thermally assisted recovery of low energy electron beam induced optical degradation of gallium nitride. A clear reduction in MOVPE grown GaN band-to-band photoluminescence intensity induced by low energy electron beam irradiation has been found before. Partial recovery of the band-to-band emission was observed after annealing in both H2 and N2 ambient, at 500 °C for 35 sec-52 h. The photoluminescence intensity was reduced to approximately 15% by the low energy electron beam irradiation and recovered to maximum of 40% of the non-irradiated level. The recovery saturated after approximately 1 minute of annealing. Since hydrogen passivated Ga-vacancies have been shown to be activated by the electron beam treatment, a plausible recovery mechanism is suggested to involve re-passivation of these vacancies due to internal hydrogen diffusion in the sample (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

We present our studies on low energy electron beam induced damage to gallium nitride semiconductor material. We have observed a clear reduction in InGaN single quantum well and bulk GaN band-to-band emission intensity induced by low energy electron beam irradiation. The dose and energy of the e-beam were 0 - 500 μC/cm2 and of 5 - 20 keV, respectively. We attributed the damage mechanism to electron beam induced defect electromigration. The electromigration is caused by a localized electric field generated by high local current density. However, further studies are needed to confirm the damage mechanism. These results should be considered in electron beam related fabrication, characterization and usage of GaN-based materials (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]