1. High-performance AlGaN∕GaN lateral field-effect rectifiers compatible with high electron mobility transistors
- Author
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Wei Huang, Wanjun Chen, Kevin J. Chen, and King-Yuen Wong
- Subjects
Electron mobility ,Materials science ,Physics and Astronomy (miscellaneous) ,business.industry ,Schottky barrier ,Transistor ,High-electron-mobility transistor ,Cathode ,Anode ,law.invention ,Threshold voltage ,law ,Breakdown voltage ,Optoelectronics ,business - Abstract
A high electron mobility transistor (HEMT)-compatible power lateral field-effect rectifier (L-FER) with low turn-on voltage is demonstrated using the same fabrication process as that for normally off AlGaN∕GaN HEMT, providing a low-cost solution for GaN power integrated circuits. The power rectifier features a Schottky-gate-controlled two-dimensional electron gas channel between the cathode and anode. By tying up the Schottky gate and anode together, the forward turn-on voltage of the rectifier is determined by the threshold voltage of the channel instead of the Schottky barrier. The L-FER with a drift length of 10μm features a forward turn-on voltage of 0.63V at a current density of 100A∕cm2. This device also exhibits a reverse breakdown voltage (BV) of 390V at a current level of 1mA∕mm and a specific on resistance (RON,sp) of 1.4mΩcm2, yielding a figure of merit (BV2∕RON,sp) of 108MW∕cm2. The excellent device performance, coupled with the lateral device structure and process compatibility with AlGaN∕GaN...
- Published
- 2008