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The ON-resistance and its temperature dependence of the high electron mobility transistor (HEMT)-compatible lateral field-effect rectifier (L-FER) are investigated. Three types of transfer length method (TLM) patterns are utilized to extract the temperature-dependent electrical parameters of the resistance model. The technique presented in this paper delivers a direct and simple methodology for the investigation of the temperature dependence of the ON-resistance in the L-FER. The simulated output characteristics of the L-FER are in good agreement with the experimental results. [ABSTRACT FROM AUTHOR]

In this paper, a zero-bias mixer using a lateral field-effect diode fabricated on standard GaN-on-Si AlGaN/GaN high electron-mobility-transistor wafers is demonstrated. The diode features strong nonlinearity near zero bias, enabled by a threshold-voltage modulation using a fluorine-plasma-treatment technique. The maximum change in conductance was adjusted to ~0 V, leading to optimal conversion loss (CL) of the mixer at zero bias and eliminating the need for any dc supplies. The mixer is characterized from room temperature (RT) to 250 °C. At 2.5 GHz and at RT, the CL and third-order intermodulation intercept point are 12.9 dB and 17.64 dBm, respectively. The operation of the proposed diode is modeled by a physical equivalent circuit, wit the element values extracted from the measured S-parameters. The voltage-biasing dependence of the CL can be explained by a the model. The high-temperature operation of the mixer shows that the proposed mixer can perform well in high-temperature and ultralow-power applications. [ABSTRACT FROM AUTHOR]