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In this article a novel distributed amplifier configuration consisting of cascaded-transistor cells is presented. For a given transistor and total gate periphery (number of transistors) in the amplifier, the new configuration gives higher gain-bandwidth product than conventional distributed amplifiers. This fact is demonstrated through computer-aided simulations as well as experimental results. [ABSTRACT FROM AUTHOR]

A systematic approach to the design of GaAs FET bandpass distributed amplifiers is presented for the first time. The graphical design procedures presented enable one to examine the trade-offs between the design variables and arrive at the appropriate design for a specified gain and bandwidth. [ABSTRACT FROM AUTHOR]

A novel hand-pass distributed amplifier design concept is presented. The amplifier can be realized in monolithic form using GaAs FETs. The amplifier has excellent widehand gain and phase response characteristics. It shows promise for applications in the millimeter wave region. In this paper the results of analytical modelling as well as computer simulations are discussed. [ABSTRACT FROM AUTHOR]