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Abstract: Carbon nanotubes (CNTs) were integrated successfully into 150nm contact holes having a TiN underlayer and a Cu single damascene top contact module. All the integration steps for CNT integration, for patterning the Cu top contact and the mask-set used are compatible with 130nm device technologies on 200mm wafers. The first resistance yield plots for the CNT contacts on full wafer level are presented. For CNT grown at 540°C in contact holes with aspect ratio 1.3, a single CNT contact hole resistance of 3.4kΩ was achieved. The structure designed, the process flow presented here for CNT integration, and the automatic probing constitute a platform that allows benchmarking different recipes and process conditions. This constitutes a significant step forward towards the realization of a contact module with vertical CNT interconnects of superior quality. This is because the platform can speed up the learning cycle time for optimizing the CNT interconnect based on learning from the electrical performance. [Copyright &y& Elsevier]

The article focuses on graphene transistors and photodetectors. It states that the graphene is a thin crystalline film that has unique electronic structure and strong electric field effect. It discusses the properties of single layer graphene based field effect transistor (FET). It also mentions the use and property of bilayer graphene (BLG) and features the operation principles of graphene photodetectors.