The magnetostriction constants, [[Lambda].sub.100] and [[Lambda]y[.sub.111], of FeTaN (10 wt% Ta) were determined in (110) oriented epitaxial thin films ([equivalent] 1500 [Angstrom],) deposited by dc magnetron sputtering onto Cu(001) buffer layers ([approximately]2000 [Angstrom]) which were grown on Si(001) single crystal substrates. The orientation relationship of the films was FeTaN(110)[parallel to]Cu(001)[parallel to]Si (001) with FeTaN[parallel to]Cu [parallel to] Si, which was satisfied by four different, equally probable in-plane orientations of the crystallites. The magnetostriction measurement was carried out on a cantilever beam measurement system calibrated with (110) oriented epitaxial Fe films with the same morphology as the unknown films assuming the bulk values of [[Lambda].sub.100] and [[Lambda].sub.111]. The magnetostriction of FeTaN films was measured as a function of angle in the sample plane and fitted with the calculated average of the four orientations. In conflict with theoretical predictions, it was found that [[Lambda].sub.100] decreases and [[Lambda].sub.111] increases as a function of lattice dilation which was taken to be proportional to the interstitial concentration. At larger normalized lattice dilation, [approximately]2%, [[Lambda].sub.111] changed sign from negative to positive. The calculated saturation magnetostriction, [[Lambda].sub.s], using these values of [[Lambda].sub.100] and [[Lambda].sub.111], agreed with published data on nanocrystalline samples of the same composition with no additional assumptions. Index Terms - FeTaN, magnetostriction, nanocrystalline alloys.