1. Linearity improvement of HBT-based doherty power amplifiers based on a simple analytical model
- Author
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Zhao, Yu, Metzger, Andre G., Zampardi, Peter J., Iwamoto, Masaya, and Asbeck, Peter M.
- Subjects
Skyworks Solutions Inc. ,Semiconductor industry -- Models ,Semiconductor industry -- Analysis ,Circuit components -- Models ,Circuit components -- Analysis ,Amplifiers (Electronics) -- Models ,Amplifiers (Electronics) -- Analysis ,Semiconductor industry ,Semiconductor device ,Business ,Computers ,Electronics ,Electronics and electrical industries - Abstract
A simple analytical model is proposed and shown to be effective in predicting the nonlinear behavior of single-ended amplifiers, as well as Doherty amplifiers implemented with GaAs heterojunction bipolar transistors (HBTs) for handset applications. The analytical model is based on linear and nonlinear components extracted from a vertical bipolar inter-company model for Skyworks Solutions Inc.'s InGaP/GaAs HBT devices. Equations derived from the model provide insights into effects of individual components on the gain and phase of both the single-ended and Doherty amplifiers. The model indicates that tuning the phase delay inserted in front of the auxiliary power amplifier (PA) within the Doherty can improve linearity at a high input power. The efficacy of the model is demonstrated by experimental results in which, for a Doherty PA with a tuned phase delay at the auxiliary PA side, the measured gain and phase agree with the simulation results. Furthermore, the third-order intermodulation distortion performance is improved as much as 8 dB when compared with a Doherty PA without phase delay tuning. Index Terms--Code division multiple access (CDMA), Doherty amplifier, heterojunction bipolar transistor (HBT).
- Published
- 2006