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The material, electrical and ultraviolet optoelectronic properties of few layers bottom molybdenum disulfide (MoS2) field effect transistors (FETs) device was investigated before and after 1 MeV electron irradiation. Due to the participation of SiO2 in conduction, we discovered novel photoelectric properties and a relatively long photogenerated carrier lifetime (several tens of seconds). Electron irradiation causes lattice distortion, the decrease of carrier mobility, and the increase of interface state. It leads to the degradation of output characteristics, transfer characteristics and photocurrent of the MoS2 FET. [ABSTRACT FROM AUTHOR]

The effects of space radiation on the structural and electrical properties of MoS2 field effect transistors (FETs) were investigated. The 1 MeV electronically equivalent International Space Station (ISS) track was used to apply fluence equivalent to the orbital for 10 (1.0 × 1012 cm−2) and 30 years (3.0 × 1012 cm−2) using the AP8 and AE8 models. X-ray photoelectron spectroscopy (XPS), Raman and photoluminescence (PL) spectra were recorded before and after irradiation. Electron irradiation produced strong desulfurization effects in MoS2 FETs. The PL spectra before and after irradiation did not change significantly, while the and A1g Raman modes were red- and blue-shifted, respectively. The XPS results demonstrated a strong desulfurization effect of the electron beam on MoS2. This reduction indicates a much higher amount of irradiation-induced S vacancies compared to Mo vacancies. The electrical characteristics of the device were measured before and after irradiation. The increase in the channel leakage current after irradiation was attributed to the oxide trapping positive charges. MoS2 FETs irradiated by the electron-beam demonstrated a decreased current. This phenomenon can be attributed to the combination of the states at the SiO2/MoS2 interfaces and Coulomb scattering. Our study provides a deeper understanding of the influence of 1 MeV electron-beam irradiation on MoS2-based nano-electronic devices for future space applications. [ABSTRACT FROM AUTHOR]

Bias dependence on synergistic radiation effects caused by 110 keV electrons and 170 keV protons on the current gain of 3DG130 NPN bipolar junction transistors (BJTs) is studied in this paper. Experimental results indicate that the influence induced by 170 keV protons is always enhancement effect during the sequential irradiation. However, the influence induced by 110 keV electrons on the BJT under various bias cases is different during the sequential irradiation. The transition fluence of 110 keV electrons is dependent on the bias case on the emitter–base junction of BJT. [ABSTRACT FROM AUTHOR]

Abstract: Radiation induced conductivity (RIC) is an important property of dielectric materials to evaluate the charge/discharge effect in orbit-service spacecraft. RIC of space-applied polyimide film was in situ measured and studied under continuous and cyclic electron irradiation in this paper. The results indicate that, for cyclic electron irradiation, there is a similar increasing-mode of RIC to those for continuous irradiation with the electron irradiation time. However, under the cyclic electron irradiation, the RIC of polyimide shows an obvious irradiation-history characteristic, namely preliminary irradiation dose effect (PIDE). In this case, the steady RIC value presents an “overshoot” behavior in the first few irradiation cycles and then decrease to a stable one as that under continuous irradiation. Prolonging the initial irradiation duration may avoid occurrence of overshoot phenomenon. The behaviors of irradiation-induced free radicals in polyimide could be applied to explain the RIC evolution processes. [Copyright &y& Elsevier]

Bipolar junction transistors are sensitive to both ionization and displacement damage due to charged particles from space radiation. Passivating oxides and the SiO 2 /Si interface are more sensitive to ionization damage whereas displacement damage may strongly influence the bulk properties of a device. Fast electrons with energies below a few MeV introduces exclusively target ionization while heavy ions at moderate energies (lower than 2 MeV/amu) results in displacement damage due to individual Frenkel-pairs generation. Although both kinds of radiation are basically independent an effective correlation was seen in the electronic characteristics of transistors. We report on the effects on current gain and current–voltage characteristics of bipolar junction transistors due to successive irradiation with 20 MeV Br ions and 110 keV electrons. [ABSTRACT FROM AUTHOR]