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We report new carbon-based coating that can be utilysed as a hard chemically inert highly condictive transparent blanket for electrodes and moving parts in a wide range of electronic and MEMS applications. Diamond-like carbon film was grown on (100) n-Si substrate by accelerated C60 ion beam irradiation. Ion energy was kept at 5 and 8 keV, substrate temperature was varied in the range 100–400 ℃. Irradiation with 5 keV beam results in growth of carbon films at all temperatures used. Films are amorphous with high amount of sp3-bonded carbon atoms. Graphite nanocrystals of ~1.5 nm in size were found in the coatings grown at 400 ℃. 8 keV beam sputters the Si target at 100 and 200 ℃, while bombardment at higher temperatures (300 and 400 ℃) results in carbon film growth. Graphite nano-crystal formation is much less pronounced at this energy. In all cases, silicon carbide interlayer is formed at the substrate-coating interface due to the ion-beam mixing effect, which results in a good adhesion of the coating. Electric resistivity of coating obtained with 8 keV ions at Ts = 400 ℃ is 1.5 × 10−4 Ω × m, whereas 5 keV ions at same Ts = 400 ℃ gives 9 × 10−4 Ω × m.