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In this paper, a wide-band first-order voltage-mode all-pass filter is presented. Due to a simple structure and appropriate performance of the proposed all-pass filter, this filter achieves a flat group delay of over 60 ps with a pole/zero pair located at 4.5 GHz. The proposed circuit demonstrates a high linearity and consumes merely 16 mW power from a 1.8-V supply. Simulation results indicate an input-referred 1-dB compression point P1dB of 4.1 dBm and the wide-band operation capability of the first order all-pass filter. Furthermore, the proposed all-pass filter is capable of converting into a second-order all-pass filter adding only a grounded capacitor. To demonstrate the performance of the proposed all-pass filter, simulation results are conducted by using Virtuoso Cadence in a TSMC 180-nm CMOS process.

This paper presents a selective magnetic resonant wireless power transfer (WPT) system, consisting of a transmitter (TX), a tunable intermediate-resonator, and a receiver (RX). In the proposed WPT system, the tunable intermediate-resonator can be either a relay resonator or an intermediate-RX by varying its variable resistance, demonstrating the flexibility of the intermediate resonator to be used for different topologies and applications. This flexibility will enable the proposed WPT system to transfer maximum energy efficiency to various distances between the TX and the RX, to longer distances for the WPT relay system and to shorter distances for the intermediate-RX system. In this case, the WPT intermediate-RX system has a larger power transfer efficiency than the WPT relay system.

This article presents a low quiescent current output-capacitorless quasi-digital complementary metal-oxide-semiconductor (CMOS) low-dropout (LDO) voltage regulator with controlled pass transistors according to load demands. The pass transistor of the LDO is segmented into two smaller sizes based on a proposed segmentation criterion, which considers the maximum output voltage transient variations due to the load transient to different load current steps to find the suitable current boundary for segmentation. This criterion shows that low load conditions will cause more output variations and settling time if the pass transistor is used in its maximum size. Furthermore, this situation is the worst case for stability requirements of the LDO. Therefore, using one smaller transistor for low load currents and another one larger for higher currents, a proper trade-off between output variations, complexity, and power dissipation is achieved. The proposed LDO regulator has been designed and post-simulated in HSPICE in a 0.18¿µm CMOS process to supply a stable load current between 0 and 100¿mA with a 40¿pF on-chip output capacitor, while consuming 4.8¿µA quiescent current. The dropout voltage of the LDO is set to 200¿mV for 1.8¿V input voltage. The results reveal an improvement of approximately 53% and 25% on the output voltage variations and settling time, respectively.

This article presents a low quiescent current outputcapacitorless quasi-digital CMOS LDO regulator with controlled pass transistors according to load demands. The pass transistor of the LDO is broken up to two smaller sizes based on a breakup criterion defined here, which considers the maximum output voltage variations to different load current steps to find the suitable current boundary for breaking up. This criterion shows that low load conditions will cause more output variations and settling time if the pass transistor is used in its maximum size. Therefore, using one smaller transistor for low load currents, and another one larger for higher currents, is the best trade-off between output variations, complexity, and power dissipation. The proposed LDO regulator has been designed and post-simulated in HSPICE in a 0.35 µm CMOS process to supply a load current between 0-100 mA while consumes 7.6 µA quiescent current. The results reveal 46% and 69% improvement on the output voltage variations and settling time, respectively.

This paper presents an output-capacitorless class-AB low-dropout (LDO) regulator with load current sinking and sourcing ability. The proposed LDO consists of two complementary pass transistors, controlled using a level shifter technique. The transient improvement section applied to the gates of the pass devices enhances the transient performance of the LDO. The proposed LDO is designed in TSMC 0.18 µm CMOS process with input and output voltages of 1.2-2.5 V and 1 V, respectively, 10 pF output capacitor, and quiescent current of 3.14 µA, and is capable to sink and source maximum load currents of ±100 mA, giving the current efficiency of 99.99%.

This article presents a low quiescent current output-capacitorless quasi-digital complementary metal-oxide-semiconductor (CMOS) low-dropout (LDO) voltage regulator with controlled pass transistors according to load demands. The pass transistor of the LDO is segmented into two smaller sizes based on a proposed segmentation criterion, which considers the maximum output voltage transient variations due to the load transient to different load current steps to find the suitable current boundary for segmentation. This criterion shows that low load conditions will cause more output variations and settling time if the pass transistor is used in its maximum size. Furthermore, this situation is the worst case for stability requirements of the LDO. Therefore, using one smaller transistor for low load currents and another one larger for higher currents, a proper trade-off between output variations, complexity, and power dissipation is achieved. The proposed LDO regulator has been designed and post-simulated in HSPICE in a 0.18¿µm CMOS process to supply a stable load current between 0 and 100¿mA with a 40¿pF on-chip output capacitor, while consuming 4.8¿µA quiescent current. The dropout voltage of the LDO is set to 200¿mV for 1.8¿V input voltage. The results reveal an improvement of approximately 53% and 25% on the output voltage variations and settling time, respectively.

This paper presents a CMOS RF second-order voltage-mode all-pass filter (APF) as a time delay cell. The proposed filter benefits from a simple structure; consisting of one transistor, three resistors, and one grounded capacitor and inductor. The filter reaches a group delay of 60 ps over a 10 GHz bandwidth, while achieving maximum delay-bandwidth-product (DBW) and it consumes only 10.3 mW power. On the other hand, an active inductor is used in the APF instead of a passive RLC tank in order to control the time delay and improve the size. In this case, the power consumption increases while time delay can be tuned. The proposed APF is designed and simulated in a TSMC 180 nm CMOS process.

This article presents a low quiescent current output capacitorless quasi-digital CMOS LDO regulator with controlled pass transistors according to load demands. The pass transistor of the LDO is broken up to two smaller sizes based on a breakup criterion defined here, which considers the maximum output voltage variations to different load current steps to find the suitable current boundary for breaking up. This criterion shows that low load conditions will cause more output variations and settling time if the pass transistor is used in its maximum size. Therefore, using one smaller transistor for low load currents, and another one larger for higher currents, is the best trade-off between output variations, complexity, and power dissipation. The proposed LDO regulator has been designed and post-simulated in HSPICE in a 0.35 µm CMOS process to supply a load current between 0-100 mA while consumes 7.6 µA quiescent current. The results reveal 46% and 69% improvement on the output voltage variations and settling time, respectively.

Buck converter; efficiency; LDO-assisted; linear-assisted; output ripple.