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Silicon does not emit light efficiently, therefore the integration of other light-emitting materials is highly demanded for silicon photonic integrated circuits. A number of integration approaches have been extensively explored in the past decade. Here, the most recent progress in this field is reviewed, covering the integration approaches of III-V-to-silicon bonding, transfer printing, epitaxial growth and the use of colloidal quantum dots. The basic approaches to create waveguide-coupled on-chip light sources for different application scenarios are discussed, both for silicon and silicon nitride based waveguides. A selection of recent representative device demonstrations is presented, including high speed DFB lasers, ultra-dense comb lasers, short (850nm) and long (2.3μm) wavelength lasers, wide-band LEDs, monolithic O-band lasers and micro-disk lasers operating in the visible. The challenges and opportunities of these approaches are discussed. [ABSTRACT FROM AUTHOR]

In this work, we report on wet-chemical defect revealing in InP fin structures relevant for device manufacturing. Both HCl and HBr solutions were explored using bulk InP as a reference. A distinct difference in pit morphology was observed between the two acids, attributed to an anisotropy in step edge reactivity. The morphology of the etch pits in bulk InP suggests that the dislocations are oriented mainly perpendicular to the surface. By studying the influence of the acid concentration on the InP fin recess in nanoscale trenches, it was found that aqueous HCl solution was most suitable for revealing defects. Planar defects in InP fin structures grown by the aspect ratio trapping technique could be visualized as characteristic shallow grooves approximately one nanometer deep. It is challenging to reveal defects in wide-field InP fins. In these structures, dislocations also reach the surface next to stack faults or twinning planes. Due to the inclined nature, dislocation-related pits are only a few atomic layers deep. Extending the pits is limited by the high reactivity of the fin sides and the strong surface roughening during etching. The process window for revealing wet-chemical defects in InP fins is limited. [ABSTRACT FROM AUTHOR]

• Oxygen exposure amount prior to growth showed large impact on physical properties. • Optimized exposure led to smooth transition from Si to perovskite oxide SrTiO 3. • Over-exposure resulted in SiO x interfacial layer and prevented epitaxy on Si. • Stoichiometry changed with oxygen amount, resulting in shifts in optical constants. • Post-annealing slightly improved k and no absorption in visible wavelength observed. The direct heteroepitaxy of strontium titanate (SrTiO 3 , STO) oxide on Si(0 0 1) substrate is an important step to integrate other functional perovskite oxides onto large scale wafers. In this study, we focused on the SrO interfacial layer in function of molecular oxygen gas exposure amount prior to the STO growth. The various formed interfaces showed large impact on the subsequent STO growth, including crystal quality and stoichiometry. The chemical binding states showed that the formation of thick SiO x interfacial layer was strongly correlated with the molecular oxygen exposure amount. More interestingly, the film stoichiometry is also strongly affected with overexposure, which resulted in optical properties degradation of the STO films. The STO optical constants, extracted from the spectroscopic ellipsometry (SE), exhibit obvious differences between crystalline and amorphous samples. Finally, post-deposition annealing was used to reduce the optical extinction, which is of primary importance for photonic applications. [ABSTRACT FROM AUTHOR]