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Interfacial reactions between Co and GaAs have been studied using bulk diffusion couples of Co (∼0.5 mm thick)/GaAs and thin-film Co(∼-40 nm) on (001)GaAs as well as the epitaxial formation of CoAs and CoGa on (001)GaAs. In addition, phase diagram of Co-Ga-As at 600°C was determined. The thin-film results are rationalized in terms of the phase diagram and bulk diffusion data.

Interfacial reactions between Ni and GaAs have been studied using bulk diffusion couples of Ni(∼0.5mm thick)/GaAs and thin-film Ni (∼40nm) on GaAs (100) in addition to phase diagram determination at 600° C. On the basis of the phase diagram and the bulk diffusion couples, the ternary phase which forms first in the thin-film couples is Ni3 GaAs. Thinfilm studies show that the epitaxial growth of equilibrium contact phases, i.e., NiAs and β-GaNi, on a GaAs (100) substrate is possible.