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The exchange bias (EB) is a unidirectional magnetic anisotropy that is found in structures containing exchange-coupled ferromagnetic/antiferromagnetic interfaces. The EB usually manifests as a horizontal shift of the hysteresis after cooling the system through the Néel temperature of the antiferromagnet in the presence of an external magnetic field. A vertical shift and an asymmetry of the magnetization loop are also possible. At present, the EB is often investigated for its effect on an application in magnetic devices in a variety of material systems and applications. The EB bilayer systems Fe/FeF2 and Fe/MnF2 represent an interesting case of structural similarities. In this paper, we show that differences between magnetic material orders and disorder contributions, found at the microscale, make them model systems for the occurrence of specific magneto-crystalline anisotropies and specific angular dependencies of the EB with significant implications for magneto-electronic applications. [ABSTRACT FROM AUTHOR]

Electric field control of magnetic properties offers a broad and promising toolbox for enabling ultra-low power electronics. A key challenge with high technological relevance is to master the interplay between the magnetic anisotropy of a ferromagnet and the exchange coupling to an adjacent antiferromagnet. Here, we demonstrate that magneto-ionic gating can be used to achieve a very stable out-of-plane (OOP) oriented magnetization with strong exchange bias in samples with as-deposited preferred in-plane (IP) magnetization. We show that the perpendicular interfacial anisotropy can be increased by more than a factor 2 in the stack Ta/Pt/PtMn/Co/HfO2 by applying −2.5 V gate voltage over 3 nm HfO2, causing a reorientation of the magnetization from IP to OOP with a strong OOP exchange bias of more than 50 mT. Comparing two thicknesses of PtMn, we identify a notable trade-off: while thicker PtMn yields a significantly larger exchange bias, it also results in a slower response to ionic liquid gating within the accessible gate voltage window. These results pave the way for post-deposition electrical tailoring of magnetic anisotropy and exchange bias in samples requiring significant exchange bias. [ABSTRACT FROM AUTHOR]

The exchange bias (EB) is a unidirectional anisotropy that occurs, e.g., upon field‐cooling ferromagnet/antiferromagnet systems. In many material systems, the EB field is reduced from one hysteresis loop to the next measurement. This so‐called training effect (TE) has been investigated in experiments and by means of theoretical efforts by many research groups. The reduction of the EB field as a result of subsequent magnetization reversal processes is often fitted by a power law, usually with the exception of n = 1, or with an equation based on the discretized Landau–Khalatnikov equation, as first suggested by Binek. Few other models, usually with more fitting parameters, have been proposed yet. Herein, it is shown that for large numbers of subsequent magnetization reversal processes in Co/CoO thin film samples, a modified power law or a logarithmic fit can model the TE in most cases as well as the abovementioned, commonly used models. [ABSTRACT FROM AUTHOR]

Exchange bias (EB) is a unidirectional anisotropy occurring in exchange-coupled ferromagnetic/antiferromagnetic systems, such as thin films, core–shell particles, or nanostructures. In addition to a horizontal shift of the hysteresis loop, defining the exchange bias, asymmetric loops and even vertical shifts can often be found. While the effect is used in hard disk read heads and several spintronics applications, its origin is still not fully understood. Especially in nanostructures with their additional shape anisotropies, interesting and often unexpected effects can occur. Here, we provide an overview of the most recent experimental findings and theoretical models of exchange bias in nanostructures from different materials. [ABSTRACT FROM AUTHOR]