1. Exciton and biexciton dynamics in single self-assembled InAs/InGaAlAs/InP quantum dash emitting near 1.55 μm.
- Author
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Dusanowski, Ł., Syperek, M., Rudno-Rudzinski, W., Mrowinski, P., Sek, G., Misiewicz, J., Somers, A., Reithmaier, J. P., Höfling, S., and Forchel, A.
- Subjects
EXCITON theory ,QUANTUM theory ,QUANTUM dash lasers ,GRAPHIC methods in statistics ,NUCLEAR energy - Abstract
Exciton and biexciton dynamics in a single self-assembled InAs/In0.53Ga0.23Al0.24As/InP(001) quantum dash emitting near 1.55 μm has been investigated by micro-photoluminescence and time-resolved micro-photoluminescence at T = 4.2 K. The exciton and biexciton fine structure splitting of ∼60 μeV, the biexciton binding energy of ∼3.5 meV, and the characteristic exciton and biexciton decay times of 2.0 ± 0.1 ns and 1.1 ± 0.1 ns, respectively, have been determined. The measurement of the biexciton and exciton cross-correlation statistics of the photon emission confirmed the cascaded relaxation process. The exciton-to-biexciton decay time ratio and a small fine structure splitting suggest carrier localization within the investigated quantum dash. [ABSTRACT FROM AUTHOR]
- Published
- 2013
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