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Piezoelectric ceramics with high strain response and low hysteresis are highly in demand for high-performance actuator applications. Unfortunately, the trade-off relationship between large field-induced strain and low hysteresis in piezoelectric ceramics is a key challenge for designing high-performance piezoelectric actuators. Herein, y mol%La-doped 0.10 Pb(In 1/2 Nb 1/2)O 3 - x PbZrO 3 -(0.90 – x)PbTiO 3 [0.10PIN- x PZ-(0.90-x)PT: y mol%La] ternary relaxor ferroelectric ceramics were prepared by conventional solid-state reaction technique. Pb(In 1/2 Nb 1/2)O 3 (PIN) as a relaxor end member was introduced into (Pb,La) (Zr,Ti)O 3 (PLZT) system to improve relaxor characteristics and strain properties. A giant strain of 0.23% was obtained in 0.10PIN-0.59PZ-0.31 PT: 8mol%La ceramic at the electric field of 20 kV/cm, with a high piezoelectric d 33 * of 1150 pm/V and low hysteresis H y of 6.4%, exhibiting a potential application in high-performance piezoelectric actuators. Furthermore, the effects of La ion doping and components on the ferroelectric, dielectric and electric field-induced strain properties were investigated, and provides a new way for improve the strain properties of piezoelectric materials. [ABSTRACT FROM AUTHOR]

There is a great demand to develop ferroelectric ceramics with both high piezoelectric coefficient and broad temperature usage range for emerging electromechanical applications. Herein, a series of Sm3+‐doped 0.25Pb(Mg1/3Nb2/3)O3‐(0.75−x)PbZrO3‐xPbTiO3 ceramics were fabricated by solid‐state reaction method. The phase structure, dielectric and piezoelectric properties were investigated, where the optimum piezoelectric coefficient d33 = 745 pC/N and electromechanical coupling factor k33 = 0.79 were obtained at the morphotropic phase boundary composition x = 0.39, with good Curie temperature TC of 242°C. Of particular importance is that high‐temperature stability of the piezoelectric and field‐induced strain was obtained over the temperature range up to 230°C for the tetragonal compositions of x = 0.40. The underlying mechanism responsible for the high piezoelectricity and temperature stability is the synergistic contribution of the MPB and local structural heterogeneity, providing a good paradigm for the design of high‐performance piezoelectric materials to meet the challenge of piezoelectric applications at elevated temperature. [ABSTRACT FROM AUTHOR]

Piezoelectric actuators are essential for numerous electromechanical applications, because of their advantages of high resolution, large generated forces, no friction, low heat dissipation and fast response. The design of the next-generation piezoelectric actuators is desired to meet the complex needs of advanced machines and instruments, where the high-performance and stable output under the combined thermal and mechanical loads are expected. However, simultaneously achieving high-performance and good temperature stability of piezoelectric actuators is a challenge, which hinders the use temperature range in practical applications. Here, in the studied Sm-doped Pb(Mg 1/3 Nb 2/3)O 3 -PbZrO 3 -PbTiO 3 system, the high piezoelectric strain coefficient d 33 * = 870 pm/V with superior temperature stability (below 7% variation over the temperature of 20°C to 280°C), together with negligible property degradation up to 106 cycles was successfully achieved. The outstanding blocking stress of 37.2 MPa and mechanical work of 6.4 kJ/m3 were obtained under the driving electric field of 15 kV/cm. This work provides a paradigm to achieve high piezoelectric strain properties with good temperature stability, where the studied materials are expected to greatly benefit the development of high temperature piezoelectric actuator applications. [Display omitted] [ABSTRACT FROM AUTHOR]