1. Optimization of the pulsed laser deposition process of In2O3 thin films for ferroelectric field effect device applications.
- Author
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Xu, Meng, Guo, Lei, Yan, Jian-Min, Xu, Zhi-Xue, Wang, Hui, Gao, Guan-Yin, and Zheng, Ren-Kui
- Subjects
FERROELECTRIC thin films ,PULSED laser deposition ,FIELD-effect devices ,FERROELECTRICITY ,FERROELECTRIC ceramics ,SEMICONDUCTOR films ,OPTOELECTRONIC devices - Abstract
A series of In
2 O3 semiconducting thin films were grown on the ferroelectric 0.71Pb(Mg1/3 Nb2/3 )O3 –0.29PbTiO3 (111) (PMN–PT) single-crystal substrates in the form of ferroelectric field effect transistor (FeFET) devices by the pulsed laser deposition. The effects of substrate temperature and oxygen pressure on the structural and electrical properties of the In2 O3 films are investigated. We find that the substrate temperature and oxygen pressure have great impact on the performance of the In2 O3 /PMN–PT FeFETs whose channel resistance could be tuned in a nonvolatile and reversible manner via the ferroelectric polarization switching in the PMN–PT layer. In particular, a significant resistance change of 144% and a carrier density change of 92% are achieved at room temperature for the In2 O3 film deposited at 600 °C and 2 Pa oxygen pressure. Our results provide useful deposition parameters for growing epitaxial In2 O3 thin films on large lattice-mismatched perovskite substrates and constructing In2 O3 thin films based FeFETs for energy-efficient nonvolatile ferroelectric field effect device applications. [ABSTRACT FROM AUTHOR]- Published
- 2021
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