1. Feedback Stabilization of a Negative-Capacitance Ferroelectric and its Application to Improve the f T of a MOSFET.
- Author
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Yuan, Zhi Cheng, Gudem, Prasad S., Aggarwal, Anirudh, VanEssen, Collin, Kienle, Diego, and Vaidyanathan, Mani
- Subjects
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METAL oxide semiconductor field-effect transistors , *FIELD-effect transistors , *INTEGRATED circuits , *ELECTRIC capacity , *FERROELECTRIC crystals , *LOGIC circuits - Abstract
We propose a parallel negative-capacitance field-effect transistor (P-NCFET) structure, in which a ferroelectric operating in its negative-capacitance region is placed in parallel with the gate and source terminals of a MOSFET. The P-NCFET is stabilized by combining careful matching of the ferroelectric with the gate capacitance along with simple feedback realized using current mirrors. The novel stabilization approach opens the possibility for a variety of new applications that exploit the negative capacitance of ferroelectrics to cancel capacitance in integrated circuits. As an example, we show the P-NCFET structure has a significantly higher unity-current-gain frequency ${f}_{T}$ compared to a conventional MOSFET. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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